AT49BV002T-90VI

AT49BV002T-90VI is a kind of non-volatile memory IC device which belongs to the field of memory. This device is a versatile 2M-bit CMOS EEPROM device containing a 2M-bit memory array with an x8 organization. It can be operated by a low voltage power source, and this low voltage is used to write data. AT49BV002T-90VI has superior features such as wide input voltage (2.7V to 3.6V) and low operating current (min. 1.6mA). These features make it suitable for different applications, including industrial control, consumer electronics, instrumentation, and more.

The AT49BV002T-90VI is organized into two 512-kilo-byte blocks that can be accessed using the row and column addresses. Each block can be individually addressed using the block-select inputs (BSLA and BSLB). The device also contains two 4-kilo-byte erasable blocks of memory that can be used to store settings or data that needs to be periodically updated.

AT49BV002T-90VI operates on a single 5V power supply. Its power consumption is greatly reduced due to the low operating voltage and low quiescent current. The device also supports fast write and read times, while also maintaining a high data retention time. Its maximum clock frequency is 40MHz and data transfer rate is 5MHz.

The working principle of AT49BV002T-90VI is based on the principles of non-volatile memory. It uses a two-transistor cell to store the data. The two transistors are connected in series and act as a storage cell. When a voltage is applied between the two transistors, a current flows through them and the data is stored.

AT49BV002T-90VI can operate in three different modes, namely, read/write/erase mode, standby mode, and suspend mode. In the read/write/erase mode, the device erases the contents of values when necessary and writes data to the EEPROM locations on demand. In the standby mode, the device enters a low-power state. In this low-power state, it is capable of maintaining the contents of the EEPROM locations. In the suspend mode, the device enters a low-power state and is able to preserve the data in the EEPROM locations.

In short, AT49BV002T-90VI belongs to the field of memory and its working principle is based on the principles of non-volatile memory. It has superior features such as wide input voltage (2.7V to 3.6V) and low operating current (min. 1.6mA), thus making it suitable for different applications.