AT49BV160T-90CI

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Memory devices are ubiquitous in the architecture and are used in many different applications. In terms of configuration and working principles, different types of memory devices can be distinguished. AT49BV160T-90CI is one of the memory devices which has several application fields and a particular working principle.

AT49BV160T-90CI is a popular 16 megabit CMOS SRAM. It is used as a buffer memory in wireless networks, mobile communications clocking, automotive telematics, telemetry and satellite systems, etc. The biggest advantage of this device is its capability of operating at very low power. It consumes only a fraction of the power than traditional SRAMs at the same operatimg frequency.

In terms of working principle, AT49BV160T-90CI uses five low voltage CMOS SRAM cell architectures as the core technology. This device operates at a voltage range from 2.7V to 3.6V, and can be programmed for an extended operational temperature range of -40C to +80C. The interface is also flexible, it features a wide range of voltages and timing set of commands that allow the device to be operated in various scenarios.

The AT49BV160T-90CI uses a grid array of 8K (256 x 32) memory cells to provide an array of data storage. The 8k array is organized into 8 each of 1K x 8 RAM banks. This allows for efficient data organization and support for both asynchronous read mode and write operations. Furthermore, this SRAM includes some error detection and correction features for improved reliability.

In addition, AT49BV160T-90CI has built-in write protect and error correction capabilities for improved security. The chip also provides multiple standby modes for power reduction, and a programmable auto-power-down mode for further power efficiency. The chip is also designed to meet stringent automotive requirements.

To summarize, AT49BV160T-90CI is a low-voltage 16 megabit CMOS SRAM used in various applications including wireless networks, mobile telecommunications clocking, automotive telematics, telemetry, and satellite systems. Its core technology is five low voltage CMOS SRAM cell architectures and it has built-in error detection and correction, write protection and multiple standby modes for power efficiency. Overall, AT49BV160T-90CI is a reliable and efficient memory device.

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