
Allicdata Part #: | AT49BV161-90CI-ND |
Manufacturer Part#: |
AT49BV161-90CI |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Microchip Technology |
Short Description: | IC FLASH 16M PARALLEL 48CBGA |
More Detail: | FLASH Memory IC 16Mb (2M x 8, 1M x 16) Parallel 9... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tray |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH |
Memory Size: | 16Mb (2M x 8, 1M x 16) |
Write Cycle Time - Word, Page: | 200µs |
Access Time: | 90ns |
Memory Interface: | Parallel |
Voltage - Supply: | 2.65 V ~ 3.3 V |
Operating Temperature: | -40°C ~ 85°C (TC) |
Mounting Type: | Surface Mount |
Package / Case: | 48-TFBGA, CSPBGA |
Supplier Device Package: | 48-CBGA (6x8) |
Base Part Number: | AT49BV161 |
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AT49BV161-90CI is a non-volatile, 16 mega-bit (1,048,576 bites) CMOS Flash memory device. The device is organized as a 16,777,216 byte array with 512 byte pages. It combines advanced CMOS byte-altering Flash technology with support circuitry including rapid programming, read and write bypass capabilities, and advanced security features.
The AT49BV161-90CI is an ideal device for a wide variety applications, such as automotive, industrial, consumer, network and telecommunications, as well as embedded systems. The device operates in a wide voltage range of 2.7V to 5.5V and can operate over the industrial temperature range from 0° to 70°C.
The AT49BV161-90CI is composed of a non-volatile flash memory cell and array, a high-speed access latch, an array multiplexer, read and write circuitry, an internal program circuitry, and a low voltage power supply monitor. The memory array is divided into 16 Word lines, or byte-alterable blocks, of 1Kbyte and each block is partitioned into eight 128 byte pages which are programmable.
The AT49BV161-90CI Flash memory can be operated in either the read mode or program/erase mode. The read mode allows the data to be read from the memory without alteration. The programming/erasing mode allows data to be written or deleted. The programming sequence is initiated by the CPU and is controlled by on-chip control logic. A data latch is used to temporarily store the data prior to program/erase operations. The data latch is enabled for a program/erase cycle, which permits the data to be written to or erased from the memory cell array in one single, fast operation.
The AT49BV161-90CI provides a range of advanced features including fast program/erase/verify times, high reliability and data retention capabilities, strong error correction codes, advanced security features, read/write bypass and more. Moreover, the AT49BV161-90CI can operate from both the 5V and 3V voltage domain, making it ideal for applications that require both these power sources. Furthermore, the device is designed to operate over the extended temperature range of –40°C to +85°C.
In conclusion, the AT49BV161-90CI is an ideal device for many applications such as automotive, industrial, consumer, network and telecommunications, as well as embedded systems. The device operates in a wide voltage range of 2.7V to 5.5V and can operate over the industrial temperature range from 0° to 70°C. The device provides high reliability and data retention capabilities, fast program/erase/verify times, strong error correction codes, advanced security features, read/write bypass and much more.
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