AT49BV1614A-90CI Allicdata Electronics
Allicdata Part #:

AT49BV1614A-90CI-ND

Manufacturer Part#:

AT49BV1614A-90CI

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Microchip Technology
Short Description: IC FLASH 16M PARALLEL 48CBGA
More Detail: FLASH Memory IC 16Mb (2M x 8, 1M x 16) Parallel 9...
DataSheet: AT49BV1614A-90CI datasheetAT49BV1614A-90CI Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tray 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 16Mb (2M x 8, 1M x 16)
Write Cycle Time - Word, Page: 50µs
Access Time: 90ns
Memory Interface: Parallel
Voltage - Supply: 2.65 V ~ 3.3 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 48-TFBGA, CSPBGA
Supplier Device Package: 48-CBGA (6x8)
Base Part Number: AT49BV1614
Description

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AT49BV1614A-90CI is a type of memory designed for a wide range of applications. It is a low-cost, low-power, high-performance memory that provides excellent electrical characteristics to support a variety of system requirements. Its main application fields are in industrial and automotive systems, i.e. where time is critical and low power is required. High-reliability applications such as aerospace and military systems, where extreme temperatures and environments are encountered, can also benefit from this memory.

AT49BV1614A-90CI is based on a non-volatile memory (NVM) technology. NVM is a type of technology that stores data for a long time even without using electric power. This makes it ideal for long-term application operation, as it does not require transformation or rewriting of data once programmed. It also ensures data integrity in a wide range of temperatures and environments, and keeps working even in power failure conditions.

The working principle of AT49BV1614A-90CI is based on a high-speed CMOS technology, which utilizes a "floating-gate" to achieve a high rate of speed and low power in writing and reading. The gate is composed of two regions of the gate that are positioned relative to one another, forming a gap that isolates the devices from one another and permits the transfer of charge between them. In the devices, electrons are stored in the floating-gate, thus allowing a wide range of voltage ranges applicable. AT49BV1614A-90CI can therefore be programmed and read very quickly, much faster than regular Flash or EEPROM memories.

It is an industry-standard memory, with standard options for various application fields. It is offered in small, low-profile packages for linear memory applications, or large packages suitable for multi-row applications, enabling it to meet the needs of various fields. It is also compatible with a wide range of operating voltages, from +2.7V to +5.5V, and it features an enhanced speed and low-power consumption.

AT49BV1614A-90CI has the capability of interfacing with an external system, containing enhanced cyclic redundancy check (CRC) capabilities, possible with fast LSTM operations. This provides a high rate of speed and ensures data integrity both in reading and writing/programming. Its high-reliability level also ensures a long life in harsh environments.

AT49BV1614A-90CI is available in a variety of packaging options and sizes. It is ideal for automotive, industrial, and safety-critical applications where time and power is critical. This memory is designed to last long and provide excellent performance in a wide range of temperatures and environments.

The specific data is subject to PDF, and the above content is for reference

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