AT49F002ANT-55PI

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The AT49F002ANT-55PI is part of a family of high-density, nonvolatile flash memory devices with an array of 512K x 8 bits of organized memory, designed for a variety of Memory applications. It is designed for use in a wide array of products, from automotive electronics to consumer electronic and networking systems.
The device allows programming and erasure of data in the flash memory cells through a standard two-wire serial protocol. The device also includes several facilities to secure this data, such as write protection, erase protection, and secure byte programming. These features provide a level of security required by industrial and consumer products for the stored data.
The device supports a wide range of supply voltages, from 2.7V to 5.5V, which makes it suitable for use in both low voltage and high voltage applications. It is also available in a variety of packages, such as PDIP, SOIC, TSSOP, QFN, and BGA, each offering different levels of pin count and memory density options.
The AT49F002ANT-55PI is particularly well-suited for use in automotive applications, such as anti-theft system, safety related, and comfort control systems, due to its packaging, wide voltage range, and endurance ratings of up to 100K rewrites and 100K erase cycles. The device is available with a temperature range of -40C to 125C, making it suitable for use in harsh environment conditions.
The device\'s working principle is based on an electrically alterable memory array of non-volatile flash memory cells. This array is organized internally as 512K bits (64K bytes) into two blocks of 256K bits (32K bytes) with shared control functions. Separate copies of the most important control functions are provided for each of the two blocks.  Data is transferred from and to the device through a standard two-wire serial interface. This interface is used for all instructions, data, programming and erasure functions.
The device contains multiple levels of protection for its memory content, including a write protection circuit, erase protection circuit, and a secure byte programming circuit. The write protection circuit enables or disables write access to the memory block, while the erase protection circuit allows or prohibits erasure of any sector in the memory array. The secure byte programming circuit allows to securely program data into a sector of the memory array with user-defined commands.
In summary, the AT49F002ANT-55PI is a high-density, nonvolatile flash memory device with an array of 512K x 8 bits of organized memory. It supports a wide range of supply voltages, from 2.7V to 5.5V, and is available in a variety of packages, such as PDIP, SOIC, TSSOP, QFN, and BGA. The device is designed for use in a wide array of products, from automotive electronics to consumer electronic and networking systems, and is particularly well-suited for automotive applications due to its endurance rating of up to 100K rewrites and 100K erase cycles. The device\'s working principle is based on an electrically alterable memory array of non-volatile flash memory cells, and its security features include a write protection circuit, erase protection circuit, and secure byte programming circuit. 

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