
Allicdata Part #: | AT49F002N-12PI-ND |
Manufacturer Part#: |
AT49F002N-12PI |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Microchip Technology |
Short Description: | IC FLASH 2M PARALLEL 32DIP |
More Detail: | FLASH Memory IC 2Mb (256K x 8) Parallel 120ns 32-... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH |
Memory Size: | 2Mb (256K x 8) |
Write Cycle Time - Word, Page: | 50µs |
Access Time: | 120ns |
Memory Interface: | Parallel |
Voltage - Supply: | 4.5 V ~ 5.5 V |
Operating Temperature: | -40°C ~ 85°C (TC) |
Mounting Type: | Through Hole |
Package / Case: | 32-DIP (0.600", 15.24mm) |
Supplier Device Package: | 32-DIP |
Base Part Number: | AT49F002 |
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AT49F002N-12PI is a nonvolatile semiconductor memory, configured to provide a state-of-the-art flash memory solution. This memory utilizes an array of bits that each store one bit of digital information. Typical applications of the AT49F002N-12PI flash memory include mobile phones, digital cameras, digital audio players, hard drives and embedded nonvolatile memory needs.
The AT49F002N-12PI provides a unique set of features for a nonvolatile semiconductor device. The device offers fast page access, low active power consumption, fast write speeds and low voltage operations. The device also offers full support for the standard range of commands, features and resources associated with a flash memory. Furthermore, the device has been designed to enable high density configurations so that it can match the high density requirements of most embedded systems.
The AT49F002N-12PI uses NAND-type floating gate memory technology. In this technology, a thin film of silicon dioxide is deposited on the semiconductor chip. This thin film acts as a layer of insulation for the thin film of silicon that lies beneath it. This thin film is connected to a series of contact points on the surface of the chip, and each contact point is connected to a memory cell. Each memory cell can hold a single bit of data. The data is stored as \'holes\' within the thin film of silicon dioxide, with each bit being represented by a different size of hole.
When the AT49F002N-12PI receives a read command, the data stored in each memory cell is retrieved. The device then converts the stored data into a digital signal that can be used by the external system. The device also supports write commands, which allows new data to be written to the memory cells. During the write operations, the thin film of silicon dioxide is atomized, allowing electrons to be stored in each hole to represent the desired stored data.
The AT49F002N-12PI also contains an on-chip ECC (Error Correction Code) circuit. This circuit can be enabled to detect and correct potential errors that may occur during read or write operations. This allows the device to maintain data integrity even in the presence of heavy ionizing radiation or other forms of noise.
The AT49F002N-12PI is an ideal choice for applications where a nonvolatile memory solution is needed. Its fast page access time, low active power consumption, fast write speeds and low voltage operations make it an ideal choice for embedded applications. Its robust support for the full range of standard flash commands, features and resources makes it an ideal choice for high-density configurations. Finally, its on-chip ECC circuit gives it an added level of data protection that is invaluable in applications where data integrity is a high priority.
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