AT49F512-90TC Allicdata Electronics
Allicdata Part #:

AT49F512-90TC-ND

Manufacturer Part#:

AT49F512-90TC

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Microchip Technology
Short Description: IC FLASH 512K PARALLEL 32TSOP
More Detail: FLASH Memory IC 512Kb (64K x 8) Parallel 90ns 32-...
DataSheet: AT49F512-90TC datasheetAT49F512-90TC Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tray 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 512Kb (64K x 8)
Write Cycle Time - Word, Page: 50µs
Access Time: 90ns
Memory Interface: Parallel
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TC)
Mounting Type: Surface Mount
Package / Case: 32-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 32-TSOP
Base Part Number: AT49F512
Description

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The AT49F512-90TC is an integrated memory device, employed frequently in embedded systems, which provides users reliable and fast, non-volatile data storage.

The versatile AT49F512-90TC can be broken down into two device types, FLASH Memory and EEPROM Memory. FLASH Memory is basically a non-volatile, random access memory with built-in error correction code. This type of memory is highly reliable and low in cost, however with FLASH sometimes comes the problem of erasing data. This can be solved by the EEPROM Memory capabilities of the AT49F512-90TC, which allows the erasing of one word of memory at a time, making it highly efficient.

The AT49F512-90TC can be found in a multitude of fields, such as home appliances, automotive, consumer electronics, medical devices, industrial applications and of course computer systems. It is convenient because of its low power requirements (1mA to 5mA), smaller size (6mmx6mm, 46-pin package) and $8.00 USD per unit price. In addition, the AT49F512-90TC also has fantastic temperature endurance ranges of temperatures (-40°C to 85°C for FLASH, 0°C to 70°C for EEPROM).

The functioning of the AT49F512-90TC starts out from the direct address mode that can access two separate FLASH and EEPROM subsectors simultaneously. These two separate memory types act with two distinct read and write operations. FLASH has two read operations, Array Read and Program Read, as well as two write operations, Erase and Program. EEPROM has three read operations, Array Read, Quad Read and Block Read, as well as one Write operation, Program. FLASH memory also has a fast programming capability, which allows up to one kilobyte of data to be programmed in less than 10 milliseconds.

The AT49F512-90TC also employs a variety of protection mechanisms. Its memory can be separated and protected into four separate blocks with the software lock-bit mechanism. Its flexibility is increased with the addition of independent user sector protection, program/erase suspend which may be used during power failure, as well as various reading of protection ID bytes.

The AT49F512-90TC integrated memory device truly shows its potential when used in embedded systems and its ability to store non-volatile data with high reliability. With its two types of memory, multiple read and write operations and such a wide range of protection capabilities, this integrated memory device is the optimal choice for any embedded applications requiring reliability at a minimal size and cost.

The specific data is subject to PDF, and the above content is for reference

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