AT49LD3200-10TC

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AT49LD3200-10TC is a CMOS serial accessing Flash Memory that integrates 3,200 Kbits of memory array with a single chip. It is fabricated using Atmel\'s electrically erasable programmable read-only memory (EEPROM 64K) CMOS technology. AT49LD3200-10TC offers features and benefits that provide users with a wide range of applications in the industrial and commercial markets.

The AT49LD3200-10TC is suitable for applications such as automotive engine control, instrumentation, computer peripherals, healthcare, and robotics. The Flash Memory is ideal for firmware updates, data storage, and other applications requiring non-volatile storage of information. It is available in two speed versions. The faster version provides up to 10 millisecond write times, while the slower version provides up to 50 millisecond write times.

AT49LD3200-10TC provides users with a wide range of features and benefits. It features 3,200 Kbits of memory array and is organized as 128K × 8, 64K × 16, 32K × 32, and 16K × 64 words. The Flash memory can be programmed or erased in either byte-wide or word-wide configurations. The byte-wide programming and erase operation times are as fast as 10 and 12 milliseconds, respectively. Furthermore, the Flash memory is compatible with the JEDEC industry standard and supports sequential word and page read operations.

Aside from its industry standard JEDEC compliance, the AT49LD3200-10TC’s advanced memory architecture allows users to achieve the highest programming speeds, up to 10 milliseconds of write time. It also supports a wide voltage range from 2.4V to 4.5V, making it ideal for applications that require low power such as portable devices. Additionally, the Flash memory incorporates an internal data erase time-out counter that disables inputs to the memory array and stores passwords to ensure maximum security.

In terms of its working principle, the AT49LD3200-10TC relies on a parallel data input port, located on the top of the chip, which is used to identify and erase memory sectors from the Flash memory. The parallel port also determines which row of memory needs to be read or programmed when using an appropriate control signal. The flash memory can be erased by applying a high voltage for a specified duration. The write operation is an alternate process of sending data in byte-wide or word-wide patterns to the memory array. The data for programming is typically sent through a serial port. Lastly, the Flash memory can also be read-back in a serial or parallel manner using appropriate control signals.

To summarise, the AT49LD3200-10TC is a 3,200 Kbits CMOS serial accessing Flash Memory device that offers various features to its users. It also allows for rapid programming times, a wide voltage range, and improved security. Furthermore, the device uses a parallel data input port to identify and erase memory sectors, facilitating its write and read operations. Overall, the AT49LD3200-10TC can be considered as a reliable and high performance memory solution for a variety of applications.

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