AT49LH004-33JX

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The AT49LH004-33JX is a memory device that belongs to the F-RAM (ferroelectric non-volatile random access memory) family of products. F-RAM is similar to regular RAM in that it stores information, but unlike RAM, F-RAM has no power supply requirement, offering significant advantages in terms of speed, density, and low-power operation.

The AT49LH004-33JX provides 4 megabits of non-volatile ferroelectric RAM with both read and write throughput capable of reaching approximately 167Mb/s. It is available in an industry-standard TSSOP-16 package, offering both space and cost savings. Furthermore, it features extended operational life, immunity from radiation errors, high speed switching and fast write cycles. Due to its low-power consumption, it is also suitable for large scale applications involving embedded or portable design.

The AT49LH004-33JX has a wide range of potential applications. In the industrial sector, it can be used to store motor settings, monitor process control operations, store product codes and other sensitive data, and track machine operation status. In the automotive sector, it can be used to store fuel injection and engine management data, monitor emissions control systems and other vehicle data, and provide navigation or audio systems with data storage. In consumer electronics, it can be used for data storage in navigation systems, audio systems, portable medical devices, and other consumer products.

F-RAM works on the principle of ferroelectricity, in which a physical change in the properties of a material triggers the storage of data. When electricity is applied to the F-RAM, the polarization direction of the material flips, creating a binary “1” or “0.” When voltage is removed, the polarization state remains and the stored data is retained. This eliminates the need to keep data stored in volatile memory, which must be recharged periodically in order to remain operational.

In order to read or write data to the F-RAM, the AT49LH004-33JX uses a simple, two-step process. First, it determines the state of the polarized region. Then, it applies an appropriate voltage to make the desired changes. The process is fast, which makes it ideal for applications which require both read and write tasks to be completed rapidly.

The AT49LH004-33JX is one of the leading memory products in its class, offering the highest performance and reliability for the most demanding applications. Its non-volatile data storage, wide operating temperature range, and low-power operation make it an attractive option for many industries and applications.

The specific data is subject to PDF, and the above content is for reference