AT49LV321T-90TI

Series:	--
Packaging:	Tray
Part Status:	Obsolete
Memory Type:	Non-Volatile
Memory Format:	FLASH
Technology:	FLASH
Memory Size:	32Mb (4M x 8, 2M x 16)
Write Cycle Time - Word, Page:	150µs
Access Time:	90ns
Memory Interface:	Parallel
Voltage - Supply:	3 V ~ 3.6 V
Operating Temperature:	-40°C ~ 85°C (TC)
Mounting Type:	Surface Mount
Package / Case:	48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package:	48-TSOP
Base Part Number:	AT49LV321

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What is AT49LV321T-90TI?

AT49LV321T-90TI is a popularly used FLASH memory component manufactured by Atmel Corporation. It is used in a number of modern electronic devices and often considered to be a reliable and cost-effective choice. This memory component is used in a variety of fields ranging from automotive and industrial to consumer applications. It has excellent sector write protection, high data retention rates and low power consumption, making it a popular choice for many electronic products.

Application Field

AT49LV321T-90TI is most commonly used in memory applications such as automotive, industrial and consumer goods. This memory component is often used in automotive to store engine control data, such as the fuel and emission control system settings. It is also used in industrial applications to store sensitive data, such as process control settings. It is used in consumer products to store multimedia content, such as videos and images. It is also used in other applications, such as data logging, data transfer and storage.

Features

AT49LV321T-90TI is a nonvolatile memory component, meaning that it does not need a power source to maintain its data. It can maintain data for up to 10 years in its off-state. It also has excellent sector write protection and data retention. The write protection ensures that a section of the memory can be locked to prevent accidental or malicious changes. The data retention rate is also very high, meaning that data stored in the memory will not be lost or corrupted.

Working Principle

AT49LV321T-90TI is a FLASH memory component that utilizes electrical pulses to write and store data. A sense amplifier circuit is used to detect the voltage level of the cells, read and then store the data in the appropriate location. The data is stored in a NAND structure, which is a grid of cells with four connections. To write data to the memory, a gate oxide layer is used to create a field-effect transistor (FET) with a physical barrier between the cells. When the voltage is applied to the appropriate gate oxide layer, it allows the electrons to flow, which in turn allows the data to be stored in the cells.

Conclusion

AT49LV321T-90TI is a reliable and cost-effective memory component that is widely used in automotive, industrial and consumer applications. It has excellent sector write protection, data retention and low power consumption, making it an ideal solution for many electronic products. AT49LV321T-90TI is a nonvolatile memory component, meaning that it does not need a power source to maintain its data. It also uses a NAND structure to store data with a gate oxide layer used to control the movement of electrons.

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