
Allicdata Part #: | AW48M64F8BNH9M-ND |
Manufacturer Part#: |
AW48M64F8BNH9M |
Price: | $ 182.73 |
Product Category: | Memory Cards, Modules |
Manufacturer: | ATP Electronics, Inc. |
Short Description: | 16GB 204 PIN DDR3-1600 UNBUFFERE |
More Detail: | Memory Module DDR3 SDRAM 16GB 1600MT/s 240-UDIMM |
DataSheet: | ![]() |
Quantity: | 1000 |
200 +: | $ 166.11300 |
Series: | -- |
Part Status: | Active |
Memory Type: | DDR3 SDRAM |
Memory Size: | 16GB |
Speed: | 1600MT/s |
Package / Case: | 240-UDIMM |
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AW48M64F8BNH9M is a dynamic random access memory (DRAM) module that is based on an asynchronous design. It is used in communication devices in order to increase storage capacity and performance of the system. The AW48M64F8BNH9M supports a wide selection of memory densities ranging from 4GB up to 16GB. It is designed to offer optimum performance, extended life cycles and excellent energy efficiency.
Application Field
The AW48M64F8BNH9M dynamic random access memory (DRAM) module is an ideal solution for embedded applications that require increased storage capacities and memory access speeds. It is especially beneficial for applications that require access on real-time data. This type of module is widely used in embedded system designs that involve storage-intensive applications, communication systems, industrial controllers, and communications systems.
As electronic systems become more complex, the need for powerful memory modules is growing. This type of module is also suitable for applications that require increased power density, low latency, fast speeds, and high reliability. These include applications that require large-scale data processing, communication systems, embedded system designs, industrial controllers, and other types of sophisticated electronic systems.
Working Principle
The AW48M64F8BNH9M uses an asynchronous design, which allows the module to access data both synchronously and asynchronously. It operates in two modes: Command Access Mode and Data Access Mode. The Command Access Mode is used to process requests from the system. The Data Access Mode is responsible for reading and writing data from the system\'s memory.
The AW48M64F8BNH9M\'s asynchronous design enables it to offer improved performance and reliability when compared to its synchronous counterparts. The module provides faster access times, improved refresh cycles, better power management, and higher levels of memory capacity. This increased efficiency makes it ideal for embedded systems that require quick access to data and require improved power management.
The AW48M64F8BNH9M also offers advanced features, such as an on-board ECC (error correction code) mechanism. This ensures that the data stored in the module is reliable and accurate. This is especially important for applications that require high levels of accuracy and reliability.
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Part Number | Manufacturer | Price | Quantity | Description |
---|
AW48P7228BNH9M | ATP Electron... | 205.74 $ | 1000 | 16GB 204 PIN DDR3-1600 UN... |
AW48P7228BNF8M | ATP Electron... | 205.74 $ | 1000 | 16GB 204 PIN DDR3-1600 UN... |
AW48M64F8BNH9M | ATP Electron... | 182.73 $ | 1000 | 16GB 204 PIN DDR3-1600 UN... |
AW48P7228BNK0M | ATP Electron... | 205.74 $ | 1000 | 16GB 204 PIN DDR3-1600 UN... |
AW48M7228BNF8M | ATP Electron... | 205.74 $ | 1000 | 16GB 204 PIN DDR3-1600 UN... |
AW48M64F8BNF8M | ATP Electron... | 182.73 $ | 1000 | 16GB 204 PIN DDR3-1600 UN... |
AW48P64F8BNK0M | ATP Electron... | 182.73 $ | 1000 | 16GB 204 PIN DDR3-1600 UN... |
AW48P64F8BNH9M | ATP Electron... | 182.73 $ | 1000 | 16GB 204 PIN DDR3-1600 UN... |
AW48M64F8BNK0M | ATP Electron... | 182.73 $ | 1000 | 16GB 204 PIN DDR3-1600 UN... |
AW48M7228BNK0M | ATP Electron... | 205.74 $ | 1000 | 16GB 204 PIN DDR3-1600 UN... |
AW48P64F8BNF8M | ATP Electron... | 182.73 $ | 1000 | 16GB 204 PIN DDR3-1600 UN... |
AW48M7228BNH9M | ATP Electron... | 205.74 $ | 1000 | 16GB 204 PIN DDR3-1600 UN... |
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