AZ23C12-7 Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Discontinued at Digi-Key
Configuration:	1 Pair Common Anode
Voltage - Zener (Nom) (Vz):	12V
Tolerance:	±5%
Power - Max:	300mW
Impedance (Max) (Zzt):	20 Ohms
Operating Temperature:	-65°C ~ 150°C
Mounting Type:	Surface Mount
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	SOT-23-3
Base Part Number:	AZ23C12

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AZ23C12-7 Application Field and Working Principle

The AZ23C12-7 diode array is a type of diode integrated circuit (IC) containing a number of semiconductor devices that can be used to reverse the polarity of a digital signal. The AZ23C12-7 is a component commonly used in digital switching devices, such as Programmable Logic Controllers (PLCs) and digital logic devices. The AZ23C12-7 contains 12 diodes, each with a single diode operating voltage of 7 volts. This is known as the breakdown voltage, which is the voltage at which the diode will pass a current. The AZ23C12-7 also has a reverse voltage polarity capability, which is the ability to invert a digital signal from one voltage level to another. This means that the AZ23C12-7 can be used to switch a digital signal from high to low (or vice versa).The AZ23C12-7 can be used in a variety of applications. One of the most common applications for the AZ23C12-7 is in logic switching and circuit protection. When used in logic switching, the AZ23C12-7 can be used to switch a digital signal from one logic state to another. This means that the AZ23C12-7 can be used to turn on and off devices, as well as switching between two different operation modes.Another common use for the AZ23C12-7 is circuit protection. When used as a circuit protector, the AZ23C12-7 can be used to prevent current overshoot and reverse current flow. This means that a circuit protected by the AZ23C12-7 can be protected from shorts and other potential hazards that may occur in digital circuits.The working principle of the AZ23C12-7 is based on the P-N junction diode. P-N junction diodes are two-terminal devices constructed from a conductive, doped semiconductor material. The P-type material is a region of the diode with an excess of positive charge carriers and the N-type material is a region with an excess of negative charge carriers. When a voltage is applied to the diode, the electric field will be generated in the area of the P-N junction. This electric field will force the electrons from the N-type material to the P-type material, allowing current to flow from the P-type material to the N-type material. This process can be used to conduct current and is referred to as forward-biased conduction. When a voltage higher than the breakdown voltage of the diode is applied, the electric field in the P-N junction will be greater, which will force the electrons in the P-type material back to the N-type material, creating a reverse-bias conduction. This means that the excess current can be blocked and prevented from flowing through the diode, which can be used to protect the circuit from over-voltage conditions. In conclusion, the AZ23C12-7 diode array is a useful tool for a variety of applications, including logic switching and circuit protection. It works according to the P-N junction diode principle, which creates a forward-bias conduction when the breakdown voltage is applied and a reverse-bias conduction when a voltage higher than the breakdown voltage is applied. This can be used to provide the necessary current control to protect the circuit from over-voltage conditions.

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