AZ23C18-E3-08 Allicdata Electronics
Allicdata Part #:

AZ23C18-E3-08GITR-ND

Manufacturer Part#:

AZ23C18-E3-08

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE ZENER 18V 300MW SOT23
More Detail: Zener Diode Array 1 Pair Common Anode 18V 300mW ±5...
DataSheet: AZ23C18-E3-08 datasheetAZ23C18-E3-08 Datasheet/PDF
Quantity: 1000
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Stock 1000Can Ship Immediately
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Lead Free Status / RoHS Status: --
Part Status: Active
Moisture Sensitivity Level (MSL): --
Configuration: 1 Pair Common Anode
Voltage - Zener (Nom) (Vz): 18V
Tolerance: ±5%
Power - Max: 300mW
Impedance (Max) (Zzt): 50 Ohms
Current - Reverse Leakage @ Vr: 100nA @ 14V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23
Description

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Diodes - Zener - Arrays

The AZ23C18-E3-08 is a Silicon Planar Zener Diode Array, with a peak reverse voltage of 8 volts. It has a total power dissipation rating of 1.5 watts and a thermal resistance range from 0.5 to 1.2K per diode. It comes in a DO-15 package and has three individual diodes.

Application Field

The AZ23C18-E3-08 silicon planar zener diode array is suitable for a variety of applications. It is often used as a voltage regulator and damper circuit in power supplies, providing protection against voltage spikes and voltage transients. It can also be used as a voltage multiplier, photovoltaic array, and in digital-to-analog converters. Additionally, it can be used as a protection factor against microprocessor failures, ensuring reliable operation even in the event of a power surge.

Working Principle

The AZ23C18-E3-08 silicon planar zener diode array operates on a similar principle to other standard diodes. When the anode of a diode is connected to a higher voltage than the cathode, the diode becomes forward biased and it allows current to flow from anode to cathode. When the diode is reverse biased and the applied voltage is above a certain value, usually referred to as the “zener knee voltage”, the energy barrier in the diode breaks down and current starts to flow from cathode to anode. This process is known as Zener breakdown, and it is the basis of the AZ23C18-E3-08\'s operation.

The AZ23C18-E3-08 array is composed of three individual diodes, which are connected in series. As the circuit is reverse biased, the first diode is forward biased and current commences to flow. As the voltage increases, however, the second and third diodes begin to break down, clamping the voltage to a rated value. This constant voltage is maintained until the current flowing through the circuit exceeds the rated power dissipation of the diodes, at which point they begin to overload.

Due to the three individual diodes in the array, the AZ23C18-E3-08 is capable of regulating voltages up to 8 volts, with total power dissipation of up to 1.5 watts. This makes it well-suited for applications which require precise and reliable voltage regulation.

The AZ23C18-E3-08 silicon planar zener diode array is a reliable and efficient solution for voltage regulation, voltage multiplier, and protection circuits. Its combination of low power consumption and high reliability allows it to be used in a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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