B120B-13-F Discrete Semiconductor Products |
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Allicdata Part #: | B120B-FDITR-ND |
Manufacturer Part#: |
B120B-13-F |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | DIODE SCHOTTKY 20V 1A SMB |
More Detail: | Diode Schottky 20V 1A Surface Mount SMB |
DataSheet: | B120B-13-F Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 20V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 500mV @ 1A |
Speed: | Fast Recovery = 200mA (Io) |
Current - Reverse Leakage @ Vr: | 500µA @ 20V |
Capacitance @ Vr, F: | 110pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AA, SMB |
Supplier Device Package: | SMB |
Operating Temperature - Junction: | -65°C ~ 150°C |
Base Part Number: | B120 |
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Diodes are an important component in many electrical, computer, and industrial applications, including rectification and signal mixing. The B120B-13-F is a single-phase, low-power rectifier diode that is used to convert alternating current (AC) to direct current (DC). This type of diode is able to switch quickly and operate reliably, making it suitable for many different uses and applications.
The B120B-13-F is an axial device that is constructed and designed to have a robust mechanical and environmental performance. Its PN junction is composed of a two lead, packaged body in which a layer of N-type semiconductor material is embedded in a layer of P-type semiconductor material. This diode features a current rating of 15A, a forward peak reverse voltage of 1200V, and a reverse working voltage of 13V. It has a surge overload rating of 80A and a junction temperature of 125°C.
The B120B-13-F application field and working principle can be explained as follows. This diode is commonly used for: high voltage rectification, computing device applications, and communication circuit applications. The B120B-13-F has a bipolar junction which allows it to conduct current in both directions. The blocking effect of the PN junction when no external voltage is applied stops current flow. In this case, the diode is said to be reverse-biased. When an external electric field is applied, electrons and holes recombine and the diode switches, allowing current to flow. This switch effect is called forward-biased. The diode can then act as a rectifier by blocking reverse current and allowing current to flow in the forward direction, converting AC to DC.
The B120B-13-F has proven to be an extremely reliable device for rectification and switching, making it a popular choice for many frequency conversion and power applications. Its ability to handle large currents and switch quickly make this diode a useful tool for many engineers, and it has found use in a variety of applications including robotics, instrumentation, and any application which requires a fast forward and reverse switching device.
The B120B-13-F has proven to be an effective and reliable single-phase, low-power rectifier diode suitable for multiple uses and applications. Its PN junction is composed of a two lead, packaged body in which a layer of N-type semiconductor material is embedded in a layer of P-type semiconductor material. It has a current rating of 15A, a forward peak reverse voltage of 1200V, and a reverse working voltage of 13V, with an associated surge overload rating of 80A. Additionally, it has a junction temperature of 125°C, making it a suitable device for many different industries. By virtue of its ability to switch quickly and operate reliably, the B120B-13-F is a popular choice for engineers seeking a fast forward and reverse switching device.
The specific data is subject to PDF, and the above content is for reference
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