| Allicdata Part #: | 1792-205610-ND |
| Manufacturer Part#: |
BACC63CT13D35PC |
| Price: | $ 73.72 |
| Product Category: | Uncategorized |
| Manufacturer: | Souriau |
| Short Description: | BACC 22C 22#22D PIN PLUG |
| More Detail: | N/A |
| DataSheet: | BACC63CT13D35PC Datasheet/PDF |
| Quantity: | 8 |
| 1 +: | $ 67.01310 |
| 10 +: | $ 63.07370 |
| 25 +: | $ 61.10240 |
| 50 +: | $ 57.16040 |
| 100 +: | $ 54.00670 |
| Series: | * |
| Part Status: | Active |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
BACC63CT13D35PC is the type code of a T13 single-phase 3-level medium voltage power device. It is a kind of high-power integrated MOS tube that is used in various fields. This MOS tube has many advantages, making it a popular choice when it comes to medium voltage applications. For instance, its high power output and low on-state resistance make it suitable for applications such as induction heating, high frequency welding, and plasma cutting.
The applications of the BACC63CT13D35PC depend on two factors: its working principle and the operating environment. In terms of working principle, this device works by controlling the current in the circuit. When a gate voltage pulse is applied to the gate of the MOSFET, the current in the circuit will be increased or decreased, depending on the polarity of the gate voltage. By controlling the current, the device can be used to either switch the power on and off, or used to dim the power. In an operating environment, the BACC63CT13D35PC is usually used in high voltage and power applications, such as induction heaters, welding, plasma cutting, and AC motors.
The device is constructed from a single substrate and is composed of three MOSFETs connected in series. The devices have low gate charge (Qgs)–a measure of the amount energy required to turn the MOSFET on–and low gate parallel resistance (Rg)–the amount of resistance that exists between the gate and the source of the device. The result is a device that has a high power output and low on-state resistance, making it very efficient and reliable.
In terms of safety, the BACC63CT13D35PC is made of an insulated substrate and has a wide temperature range. The device is also designed to protect itself from any damage, which includes a dual function self-protection latch, a fault alarm output, and an accumulative overload protection. The device is also temperature-resistant and has a high dielectric strength. Overall, the device is designed to withstand the rugged environments that many industrial applications face.
In conclusion, the BACC63CT13D35PC is a high power integrated MOS tube that is used in various fields, such as induction heating, high frequency welding, and plasma cutting. The device has a high power output and low on-state resistance, making it very efficient and reliable. It is also made of an insulated substrate and is designed to protect itself from any damage. The device also has a wide temperature range and high dielectric strength, making it suitable for many industrial applications.
The specific data is subject to PDF, and the above content is for reference
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BACC63CT13D35PC Datasheet/PDF