BAT54CWT1 Allicdata Electronics
Allicdata Part #:

BAT54CWT1-ND

Manufacturer Part#:

BAT54CWT1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: DIODE ARRAY SCHOTTKY 30V SOT323
More Detail: Diode Array 1 Pair Common Cathode Schottky 30V 200...
DataSheet: BAT54CWT1 datasheetBAT54CWT1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Voltage - Forward (Vf) (Max) @ If: 800mV @ 100mA
Speed: Small Signal =
Reverse Recovery Time (trr): 5ns
Current - Reverse Leakage @ Vr: 2µA @ 25V
Operating Temperature - Junction: -55°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323
Base Part Number: BAT54CW
Description

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A BAT54CWT1 is an array of four complementary switching diodes in one package (Figure 1). This device is designed using advanced bipolar processing techniques to obtain high-speed switching. It is ideal for fast switching applications in low power, low voltage, low-current applications. Each diode has a peak forward current rating of 100 mA and operates at a maximum junction temperature of 150°C.

The BAT54CWT1 is commonly used in applications such as AC/DC power supplies, DC/DC converters, and in controllers for switching loads. These diodes are also used for high-frequency applications such as RF mixing, signal modulation, and signal switching. This type of diode is well-suited for applications that require high-speed switching and no reverse current flow.

Working Principle

The BAT54CWT1 is a silicon semiconductor device with a P-type material at the anode and an N-type material at the cathode. The operation of the diode depends on minority carriers that flow in the P-type material. When the device is forward biased, the majority electrons flow through the junction and the minority carriers are injected into the P-type material (Figure 2). This creates a region that is depleted of free electrons. This depletion region prevents the current from flowing in the opposite direction.

When the forward bias voltage is removed, the electrical field across the junction dissipates, and the minority carriers are no longer injected into the P-type material. This allows the free electrons to recombine and the depletion region to disappear. This allows the reverse current flow, so the diode is said to be in the off state.

The BAT54CWT1 also has a high forward voltage drop, which is the amount of energy that is dissipated as heat when the diode is in the forward biased state. This makes the BAT54CWT1 well suited for applications that require a high forward voltage drop, such as rectification or DC-DC conversion. The reverse voltage of the device is also relatively low, which is beneficial in applications such as signal switching, where a low reverse voltage drop is desirable.

The BAT54CWT1 can also be used in applications such as signal modulation, as it has a very low capacitance. This is beneficial when signal modulation is required, as the low capacitance reduces signal loss. This also makes it an ideal choice for high-speed switching, as it can be switched on and off quickly.

In summary, the BAT54CWT1 is an ideal choice for low power, low voltage, and low-current applications, as it has a high forward voltage drop, low reverse voltage drop, and low capacitance. This makes it suitable for applications such as AC/DC power supplies, DC/DC converters, signal switching, and signal modulation, as well as for high-speed switching.

The specific data is subject to PDF, and the above content is for reference

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