BB 659C E7912 Allicdata Electronics

BB 659C E7912 Discrete Semiconductor Products

Allicdata Part #:

BB659CE7912-ND

Manufacturer Part#:

BB 659C E7912

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: DIODE VARIABLE 30V 20MA SCD-80
More Detail: Varactor Single 30V Surface Mount PG-SCD80-2
DataSheet: BB 659C E7912 datasheetBB 659C E7912 Datasheet/PDF
Quantity: 1000
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Lead Free Status / RoHS Status: --
Part Status: Obsolete
Moisture Sensitivity Level (MSL): --
Capacitance @ Vr, F: 2.75pF @ 28V, 1MHz
Capacitance Ratio: 15.3
Capacitance Ratio Condition: C1/C28
Voltage - Peak Reverse (Max): 30V
Diode Type: Single
Q @ Vr, F: --
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-80
Supplier Device Package: PG-SCD80-2
Base Part Number: BB659
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

A variable capacitance diode, often referred to as a Varicap, varactor, or tuning diode, is a device that is able to adjust capacitance. Variable capacitance diodes are used in many applications, from radio frequency tuners to voltage-controlled oscillators. The BB 659C E7912 variable capacitance diode is one of the most popular such diodes in the market.

This device is able to provide non-linear capacitance with a reverse bias in the range of 0.1 to 5.6 pF. Such a diodes must exhibit very low noise and a high breakdown voltage, both of which the BB 659C E7912 excels at. Additionally, the BB 659C E7912 has an excellent bandwidth and can be used with clock speeds up to 12 GHz.

Applications

Variable capacitance diodes can be used for a variety of purposes. Most notably, they are used in radio frequency tuners and voltage-controlled oscillators. In radio frequency tuners, the variable capacitance diode can be used to adjust the capacitance of an antenna to tune in to a specific frequency. Similarly, in voltage-controlled oscillators, the diode can be used to adjust the frequency of an oscillator by allowing the current to flow through it at a specific voltage. In both cases, the BB 659C E7912 is well-suited to the task due to its low noise, high breakdown voltage, and excellent bandwidth.

The BB 659C E7912 can also be used in voltage-controlled filters and mixers. In voltage-controlled filters, the diode can be used to adjust the cut-off frequency of a filter, while in mixers it can be used to adjust the bias voltage. Again, the BB 659C E7912 is ideal for such applications due to its high breakdown voltage and excellent performance.

Working Principle

The working principle of a variable capacitance diode is based on the behavior of a PN-junction under reverse bias. When a reverse bias is applied, an electric field is generated within the PN-junction that can be adjusted to modify the capacitance of the diode. By adjusting the bias voltage, the electric field can be tuned to the desired capacitance.

In the case of the BB 659C E7912, the working principle is similar to that of other variable capacitance diodes. The device is able to adjust its capacitance in the range of 0.1 to 5.6 pF when a reverse bias is applied. Additionally, the device has an exceptional breakdown voltage and low noise for applications that require precision capacitance control.

Conclusion

The BB 659C E7912 is a popular variable capacitance diode that can be used in a variety of applications. The device is able to provide non-linear capacitance with a reverse bias in the range of 0.1 to 5.6 pF, and has an exceptional breakdown voltage and low noise. Such features make the BB 659C E7912 suitable for radio frequency tuners, voltage-controlled oscillators, voltage-controlled filters, and mixers. The working principle of the BB 659C E7912 is based on the behavior of a PN-junction under reverse bias, which can be adjusted to modify the capacitance of the diode.

The specific data is subject to PDF, and the above content is for reference

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