BB664H7902XTSA1

Series:	--
Packaging:	Tape & Reel (TR)
Lead Free Status / RoHS Status:	--
Part Status:	Obsolete
Moisture Sensitivity Level (MSL):	--
Capacitance @ Vr, F:	2.75pF @ 28V, 1MHz
Capacitance Ratio:	17.8
Capacitance Ratio Condition:	C1/C28
Voltage - Peak Reverse (Max):	30V
Diode Type:	Single
Q @ Vr, F:	--
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	SC-80
Supplier Device Package:	PG-SCD80-2
Base Part Number:	BB664

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------ Introduction ------

Variable capacitance diodes, also known as varicaps, have become a crucial component in various electronic circuits, as they allow for the adjustment of a circuit’s capacitance to an exact value. This makes them useful in radio receivers, phase shifters, and other applications. Of the many versions of variable capacitance diodes, the BB664H7902XTSA1 is one of the most popular and reliable. This article will discuss the application field and working principle of the BB664H7902XTSA1.

------ Application Field ------

The BB664H7902XTSA1 is an epitaxial N-channel junction tightly coupled with an N-base mesa silicon depletion-mode semiconductor. Owing to its high dissipation capacity and reliability, the BB664H7902XTSA1 is typically found in RF and microwave applications, such as those in remote controls and receiver circuits.In addition to serving as an oscillator, the BB664H7902XTSA1 can also be used as an amplifier. Its linear response makes it ideal for amplifying very low frequencies. Its precision makes it a good choice for low-noise circuits.The BB664H7902XTSA1 can also be used in phase-locked loop (PLL) circuits, as it allows for precise frequency control. Furthermore, it can be used to modulate an incoming signal and to provide temperature compensation in broadband amplifiers.

------ Working Principle ------

The working principle behind the BB664H7902XTSA1 is based on the ability of a N-channel junction to store charge. When a bias voltage is applied to the device, some of the electrons that move through the junction to the N-base remain trapped in the depletion layer between the N-base and the N-channel.This trapped charge stores a small amount of capacitance, which acts as a tuned circuit. When the bias voltage is increased, the amount of charge trapped in the depletion layer increases, thus increasing the capacitance.The negative bias voltage of the device is typically provided from a DC power supply and adjusted with a variable voltage controller. As the voltage is varied, the capacitance of the device changes, thus allowing for precise control over the capacitance.

------ Conclusion ------

The BB664H7902XTSA1 variable capacitance diode is an extremely versatile and reliable component. It can be used in Remote controls, radios, oscillators, amplifiers and phase-locked loop circuits. Its working principle is based on the ability of an N-channel junction to store charge, which allows for the adjustment of the device’s capacitance.

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