BB439E6327HTSA1 Allicdata Electronics
Allicdata Part #:

BB439E6327HTSA1TR-ND

Manufacturer Part#:

BB439E6327HTSA1

Price: $ 0.16
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: DIODE RF SGL 28V 20MA SOD323-2
More Detail: Varactor Single 28V Surface Mount PG-SOD323-2
DataSheet: BB439E6327HTSA1 datasheetBB439E6327HTSA1 Datasheet/PDF
Quantity: 3000
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
3000 +: $ 0.15261
6000 +: $ 0.14208
15000 +: $ 0.14033
Stock 3000Can Ship Immediately
$ 0.16
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Lead Free Status / RoHS Status: --
Part Status: Not For New Designs
Moisture Sensitivity Level (MSL): --
Capacitance @ Vr, F: 6pF @ 25V, 1MHz
Capacitance Ratio: 8
Capacitance Ratio Condition: C2/C25
Voltage - Peak Reverse (Max): 28V
Diode Type: Single
Q @ Vr, F: 600 @ 25V, 200MHz
Operating Temperature: -55°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Supplier Device Package: PG-SOD323-2
Base Part Number: BB439
Description

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Diodes - Variable Capacitance (Varicaps, Varactors)

A variable capacitance diode, also known as a varicap diode or a varactor diode, is a type of diode designed to exploit the voltage-dependent capacitance of a reverse-biased p-n junction to varying degrees. Diodes vary in their fringing capacitance in response to changes in their reverse bias. This enables these diodes to act as adjustable capacitors and is their main characteristic.

This type of diode, the BB439E6327HTSA1, is used in testing and measurement applications, particularly those that require very high capacitance. It is an ultra-low frequency varicap diode with a voltage-controlled capacitance range of 40-45pF. This diode is intended for use in high isolation, high-frequency bias T-networks and surface-mount technology (SMT) applications.

The BB439E6327HTSA1 has a wide dynamic resistance combined with fast switching time. This helps in minimizing parasitic capacitances, affecting dynamic resistance stability and fast optical attenuation. It also offers a low reverse breakdown voltage, a flammability rating of UL-94 V-10, and a high reverse leakage current.

The working principle behind the BB439E6327HTSA1 is very simple. The p-n junction capacitance is the main functioning feature of the diode. The number and nature of the junction determines the capacitance of the device. The BB439E6327HTSA1 comprises a very large number of junctions in order to provide its high capacitance. By applying a reverse bias voltage to the diode, the voltage-dependent capacitance increases. The increase in capacitance is proportional to the applied voltage.

In testing and measurement applications, this varicap diode is extremely useful because it can be used to adjust the operating parameters or indicators of a device. For example, it can be used to increase or decrease the output signal set of a signal generator. It can also be used to adjust the frequency of a signal in an oscillator, or to adjust the impedance of a filter circuit. It can also be used as a voltage-controlled switch in a circuit.

In RF applications, the BB439E6327HTSA1 is used in LC (Inductor-Capacitor) resonant tank circuits, in FET and bipolar RF amplifiers, and in phase-shifting and power-matching circuits. It is also used in frequency-dependent phase-shift networks and in phase-shift control circuits.

In SMT applications, the BB439E6327HTSA1 is used for its low parasitic capacitance and high isolation characteristics for high performance applications. The capacitance of the diode decreases when reverse bias voltage is increased, allowing for increasing frequency stability of the device. Additionally, the device\'s high voltage rating and wide dynamic resistance contributes to the devices’ low operating temperature.

In summary, the BB439E6327HTSA1 is a variable capacitance diode that is used in testing and measurement applications, RF applications, and SMT applications. The capacitance of the diode is proportional to the applied reverse-bias voltage and so can be used to adjust the characteristics, such as frequency or impedance, of a device. It is also useful in applications that require high isolation and low parasitic capacitance, as it can provide these advantages while still remaining below its operating temperature.

The specific data is subject to PDF, and the above content is for reference

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