Allicdata Part #: | BB804SF1E6327HTSA1TR-ND |
Manufacturer Part#: |
BB804SF1E6327HTSA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | DIODE VAR CAP 18V 50MA SOT-23 |
More Detail: | Varactor 1 Pair Common Cathode 18V Surface Mount P... |
DataSheet: | BB804SF1E6327HTSA1 Datasheet/PDF |
Quantity: | 1000 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Lead Free Status / RoHS Status: | -- |
Part Status: | Obsolete |
Moisture Sensitivity Level (MSL): | -- |
Capacitance @ Vr, F: | 47.5pF @ 2V, 1MHz |
Capacitance Ratio: | 1.71 |
Capacitance Ratio Condition: | C2/C8 |
Voltage - Peak Reverse (Max): | 18V |
Diode Type: | 1 Pair Common Cathode |
Q @ Vr, F: | 200 @ 2V, 100 MHz |
Operating Temperature: | -55°C ~ 125°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | PG-SOT23-3 |
Base Part Number: | BB804 |
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Variable capacitance diodes, or varicaps or varactors, offer continuously tunable capacitance making them useful for frequency selection, control and tuning operations in a variety of different applications. The BB804SF1E6327HTSA1 is a varicap diode tuned for UHF and VHF operations with a nominal capacitance value of 1.7 to 8.2 pF.
The BB804SF1E6327HTSA1 is fabricated from a silicon or germanium junction covered with a layer of capacitance-varying insulator, such as silicon dioxide. As the reverse bias voltage is increased, the width of the depletion layer increases which in turn increases capacitance. The value of capacitance generated is proportional to the voltage applied, enabling a large range of selectablecapacitances.
These types of diodes have a wide range of practical use cases in fields such as RF and microwave engineering, mobile radio and television antenna networks, and telecommunications. In radio receiver circuits, they are used as tuning devices such as frequency selectors, oscillators, and automatic frequency control (AFC) circuits. They can tune circuit resonance, rejecting adjacent channel interference. They can also be used for attenuating the frequency of an oscillator or amplifier, and for voltage-controlled frequency modulation. In transmitters, the BB804SF1E6327HTSA1 can be used for impedance matching,modulation, and pulse formation.
The BB804SF1E6327HTSA1 has a wide range of supporting features, such as verylow voltage tuning, allowing it to be combined with low voltage ICs,and a very low RF spurious tuning for improved image rejection inRF applications. It has an integral guardring shield for reverse voltagesupport up to 40V, and it supports a rugged die structure to guarantee excellent RF performance in biased applications. Its total power dissipation is 15 mW and it operates over a wide temperature range, making it a reliable device for even harsh conditions.
In summary, the BB804SF1E6327HTSA1 is an ideal choice for a wide range of applications requiring continuous tuning capabilities. Its low voltage tuning combined with its range of supporting features makes it a reliable device for even harsh conditions. It is most prominently used for frequency selection, control, and tuning operations in the fields of RF and microwave engineering, mobile radio, television antenna networks, and telecommunications.
The specific data is subject to PDF, and the above content is for reference
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