BCR 116F E6327

DC Current Gain (hFE) (Min) @ Ic, Vce:	70 @ 5mA, 5V
Base Part Number:	BCR116
Supplier Device Package:	PG-TSFP-3
Package / Case:	SOT-723
Mounting Type:	Surface Mount
Power - Max:	250mW
Frequency - Transition:	150MHz
Current - Collector Cutoff (Max):	100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic:	300mV @ 500µA, 10mA
Series:	--
Resistor - Emitter Base (R2):	47 kOhms
Resistor - Base (R1):	4.7 kOhms
Voltage - Collector Emitter Breakdown (Max):	50V
Current - Collector (Ic) (Max):	100mA
Transistor Type:	NPN - Pre-Biased
Part Status:	Discontinued at Digi-Key
Packaging:	Tape & Reel (TR)

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Introduction to BCR 116F E6327

BCR 116F E6327 is a single, pre-biased transistor. It belongs to the family of BJT transistors, which stands for bi-polar junction transistor. Being pre-biased, it has an inherent advantage. This transistor is advantageous in applications that require a constant current and higher amplitudes of voltage. As it is constructed with three layers, it is capable of current amplification and proper energy management.Why Use BCR 116F E6327?As it is pre-biased, the BCR 116F E6327 is especially useful for applications that need a constant current source and a high voltage.Due to its construction, the BCR 116F E6327 offers excellent energy management and low-level noise reduction. With a high efficiency and accurate current amplification, it is an ideal choice for any device needing it.Applications of BCR 116F E6327The BCR 116F E6327 is typically used in logic circuits, power supplies, amplifiers and signal processing. It is also capable of driving a variety of motors and other applications that need a higher voltage supply. As its power consumption is low, it is very suitable for low-power applications, such as robotic and telecommunications components. Principle of WorkingThe BCR 116F E6327 works by using a three-layered structure. The first layer is a base, which is made up of a special material that transfers the information from the other two layers. The second layer is called the base layer, which is a semiconductor material. The third layer is the collector, which stores the electrons from the other two layers. The BCR 116F E6327 uses a voltage-gated transistor that is triggered by the base layer. When the transistor is triggered, electrons from the base layer will flow through the collector, creating a current. This current is then used to power the device. The voltage then lowers, causing the transistor to turn off and the current to be turned off. As the current is constant, the device will remain connected. In the case of the BCR 116F E6327, the three-layered structure requires a lower voltage than other transistors, reducing the power consumption. This is beneficial to devices that require a high voltage but low power.ConclusionThe BCR 116F E6327 is a single, pre-biased transistor that is ideal for applications that need a constant current source and a high voltage. With a low-level noise reduction, high efficiency and accurate current amplification, the BCR 116F E6327 is a great choice for many applications. The three-layered structure is useful for low-power applications. Its transistor is triggered by the voltage-gated transistor, allowing for a regular current supply.

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