BCR 116L3 E6327 Allicdata Electronics
Allicdata Part #:

BCR116L3E6327-ND

Manufacturer Part#:

BCR 116L3 E6327

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: TRANS PREBIAS NPN 250MW TSLP-3
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: BCR 116L3 E6327 datasheetBCR 116L3 E6327 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Base Part Number: BCR116
Supplier Device Package: PG-TSLP-3-4
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Power - Max: 250mW
Frequency - Transition: 150MHz
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Series: --
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 4.7 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: NPN - Pre-Biased
Part Status: Discontinued at Digi-Key
Packaging: Tape & Reel (TR) 
Description

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The BCR 116L3 E6327 belongs to the category of transistors, bipolar (BJT), single, pre-biased. It is a small signal transistor that is typically used in consumer electronic product design. It is particularly suitable for use in applications such as audio amplifiers, switching, and alarm circuits. This device was designed for applications where small switching currents, or large continuous current, are needed within a given temperature range.

The BCR 116L3 E6327 is an NPN silicon planar epitaxial transistor. It is a low voltage, high-speed logic switching transistor. It has a low saturation voltage and is capable of driving high current. The BCR 116L3 E6327 is designed for use in high frequency switching applications. It has a very high switching speed and low saturation voltage, which makes it suitable for a wide range of DC, AC, and pulse-width modulated waveforms. The BCR 116L3 E6327 features a built-in self-protective diode to prevent damage from overcurrent conditions. This diode helps to limit the amount of current that the transistor can draw from its collector. The diode also helps to protect against unintended troubleshooting while the device is in operation.

The working principle of the BCR 116L3 E6327 involves the creation of an active region between its emitter and collector. Current flow is limited to the positive side of the emitter base junction, which is known as the forward biased junction. This junction allows only electrons to flow towards the collector, leaving the emitter positive side with a positive charge. The positive charge leaves the energy state of the emitter and is then moved through the base region to the collector. In this way, the base collector voltage of the transistor allows the electrons in the collector to move to the emitter, creating a current in the circuit. The base collector voltage is also known as the operating voltage of a transistor.

The BCR 116L3 E6327 is a versatile device that can be used in a number of applications. It can be used in amplifiers and switching circuits, as well as alarm circuits. The low saturation voltage and high switching speed make it suitable for a wide range of DC, AC, and pulse-width modulated waveforms. It is particularly suitable for audio amplifier and alarm circuit applications. Its built-in protection diode further increases its versatility and makes it more adaptable to various circuit conditions.

In conclusion, the BCR 116L3 E6327 is a small signal transistor designed for use in consumer electronic products. It has a low saturation voltage and high switching speed, and is suitable for a range of DC, AC, and pulse-width modulated waveforms. It is particularly suitable for audio amplifier, switching, and alarm circuit applications and has a built-in protection diode for added versatility. Its application field is broad and its working principle simple, making it a valuable asset in any engineering project.

The specific data is subject to PDF, and the above content is for reference

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