BCR 135L3 E6327

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

BCR 135L3 E6327 Application Field and Working Principle

BCR 135L3 E6327 is a pre-biased discrete Transistor, a type of Bipolar Junction Transistor (BJT). It has a wide variety of applications, including in audio applications, amplifier, and power supplies. The power supply and audio amplifier applications are those where it is especially beneficial. The transistor’s characteristics are suitable for both simple and complex frequency applications.

BCR 135L3 E6327 has a double base structure with an NPN configuration. This makes it very suitable for low input bias current applications. This transistor is particularly popular in power supplies and audio amplifier applications because it is highly reliable and efficient in its use of power. The typical power dissipation of the BCR 135L3 E6327 is 12 watts.

The BCR 135L3 E6327 is a general-purpose transistor, meaning it is suitable for a variety of uses. Its typical frequency of up to 30 MHz makes it ideal for use in audio applications where high frequency gain is important. It also has a gain of 600 and low noise performance, making it ideal for audio applications. The transistor’s fast switching time and low current leakage makes it well-suited for use in power supply designs.

The BCR 135L3 E6327 has a wide range of features, making it suitable for a variety of applications. It includes a very low noise performance, low distortion, and low thermal resistance. It is also well-suited for use in switching applications because of its low on-state collector and very low capacitance between the collector-base junctions. Furthermore, it has a very low thermal resistance making it better for power supply applications than other devices.

When it comes to working principle, the BCR 135L3 E6327 transistor is an NPN semiconductor device, meaning that it consists of an N-type semiconductor layer sandwiched between two P-type semiconductor layers. When a current is passed through one side of the device, called the emitter, electrons flow from the emitter side to the base side. These electrons travel through the base and then, when they reach the other side of the base, they are capable of crossing the gap between the emitter and the collector, thus allowing current to flow through the other side of the device, the collector. In this way, current gain is achieved.

The BCR 135L3 E6327 is a very efficient and reliable pre-biased discrete transistor. It has several features that make it suitable for a wide variety of applications, especially in the audio and power supply industries. With its high performance characteristics and low power consumption, this device is well-suited for use in a variety of different applications.

The specific data is subject to PDF, and the above content is for reference