Allicdata Part #: | BCR141TE6327-ND |
Manufacturer Part#: |
BCR 141T E6327 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | TRANS PREBIAS NPN 250MW SC75 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | BCR 141T E6327 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 50 @ 5mA, 5V |
Base Part Number: | BCR141 |
Supplier Device Package: | PG-SC-75 |
Package / Case: | SC-75, SOT-416 |
Mounting Type: | Surface Mount |
Power - Max: | 250mW |
Frequency - Transition: | 130MHz |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 10mA |
Series: | -- |
Resistor - Emitter Base (R2): | 22 kOhms |
Resistor - Base (R1): | 22 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | NPN - Pre-Biased |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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BCR 141T E6327 is a type of single, pre-biased bipolar junction transistor (BJT), used for a variety of applications. This type of transistor is typically used in low-power general-purpose applications such as audio amplification, radio-frequency (RF) amplification, switching circuits, and more. It is a field-effect transistor that combines a low voltage drop with a wide range of current handling capabilities.
The basic structure of BCR 141T E6327 is a three-layer structure consisting of a base, collector, and emitter. The base is generally the most important part of the transistor since it is responsible for controlling the flow of current through the device. The collector serves as the output for the transistor, and the emitter is the negative voltage terminal that is used to bias the base-collector junction. The BCR 141T E6327 utilizes a PN-junction, which is the simplest type of bipolar junction, with a voltage drop between the base and collector.
The working principle of the BCR 141T E6327 is based on the semiconductor effects of a junction between two dissimilar metals. When a DC voltage is applied to the base of the device, it creates a depletion layer and creates one type of semiconductor material at the junction. This creates an immediate current and a discrete number of electrons that move between the two points. Because electrons are fundamental electrical carriers, this voltage induces a current flow that is inversely proportional to the amount of voltage applied. This current flow can then be controlled by increasing or decreasing the base voltage, which then, in turn, increases or decreases the current going through the device. This property makes the BCR 141T E6327 ideal for low-power applications.
BCR 141T E6327 is ideal for applications where low power consumption and wide current handling are needed. It has a lower voltage drop than other transistors and can be used in a variety of audio and RF applications. This type of transistor is often used in pre-emphasis circuits, limiting amplifiers, signal range amplifiers, and AGC (Automatic Gain Control). It is also used in switching circuits, where it can provide switching at a faster rate and with reduced electrical noise. Furthermore, its wide current range makes it useful for battery-operated or portable devices, where low power consumption is required.
In conclusion, BCR 141T E6327 is a type of single, pre-biased bipolar junction transistor (BJT) that is ideal for low-power applications. Its three layer structure – the base, collector, and emitter – works in combination with its PN-junction to create a low voltage drop and wide current handling capabilities. It is ideal for applications such as audio and RF amplification, switching circuits, pre-emphasis circuits, and limiting amplifiers, as well as portable devices and battery-operated devices.
The specific data is subject to PDF, and the above content is for reference
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