BCR 153L3 E6327

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Discontinued at Digi-Key
Transistor Type:	PNP - Pre-Biased
Current - Collector (Ic) (Max):	100mA
Voltage - Collector Emitter Breakdown (Max):	50V
Resistor - Base (R1):	2.2 kOhms
Resistor - Emitter Base (R2):	2.2 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:	20 @ 20mA, 5V
Vce Saturation (Max) @ Ib, Ic:	300mV @ 1mA, 20mA
Current - Collector Cutoff (Max):	100nA (ICBO)
Frequency - Transition:	200MHz
Power - Max:	250mW
Mounting Type:	Surface Mount
Package / Case:	SC-101, SOT-883
Supplier Device Package:	PG-TSLP-3-4

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Introduction

BCR 153L3 E6327 is a pre-biased single bipolar junction transistor (BJT). This pre-biased BJT has three pins connections. Transistor biasing or a transistor reference point is an important application in the field of electronics engineering. The purpose of pre-biasing is to control the stably (bias) or voltage of the BJT\'s to achieve certain electrical characteristics for the transistor.

Applications

The BCR 153L3 E6327 single pre-biased BJT is used to regulate electrical currents in a number of electronic applications. It can be found as a component in automotive electronics, power supplies, industrial electronics, audio amplifiers, motion control systems, voltage regulators and battery management systems. In addition, pre-biased BJTs are used in circuits that require a stable bias point and are characterized by their high integration and low power consumption, thus enabling the development of more accurate and efficient electronic systems.

Working Principle

A pre-biased BJT consists of two PN junctions, referred to as the base-emitter and base-collector junctions. These junctions form two transistors and act as two independent devices. The base-emitter junction of a BJT consists of a single P-N layer, and the voltage applied to it will determine the current traveling through it. This current is known as the base current. The base-collector junction of a BJT consists of two P-N layers. When the base current passes through this junction, a large current is generated in the collector terminal, which is referred to as the collector current.The working of a pre-biased BJT relies on a stable operating point, referred to as the Q-point. The pre-biased BJT is designed to attain the optimum operating point. In order to accomplish this, the base-emitter and base-collector junctions of the pre-biased BJT are pre-biased with a controlled voltage. This voltage is dependent on the power supply and the required characteristics of the BJT.Therefore, when the voltage applied to the base-emitter junction is increased, the forward base current is increased proportionally and the voltage across the base-collector junction remains constant. As a result, the collector current is increased as well. Similarly, when the voltage applied to the base-emitter junction is reduced, the corresponding base current and collector current are reduced as well.

Conclusion

BCR 153L3 E6327 single pre-biased BJT is used for regulating electrical currents in a number of electronic applications. The working principle of this type of BJT is based on a stable, pre-biased operating point, referred to as the Q-point. The pre-biased BJT is designed to attain the optimum operating point and the voltage applied to its base-emitter junction is dependent on the power supply and the required characteristics of the transistor.

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