Allicdata Part #: | BCR158L3E6327-ND |
Manufacturer Part#: |
BCR 158L3 E6327 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | TRANS PREBIAS PNP 250MW TSLP-3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | BCR 158L3 E6327 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Specifications
DC Current Gain (hFE) (Min) @ Ic, Vce: | 70 @ 5mA, 5V |
Base Part Number: | BCR158 |
Supplier Device Package: | PG-TSLP-3-4 |
Package / Case: | SC-101, SOT-883 |
Mounting Type: | Surface Mount |
Power - Max: | 250mW |
Frequency - Transition: | 200MHz |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 10mA |
Series: | -- |
Resistor - Emitter Base (R2): | 47 kOhms |
Resistor - Base (R1): | 2.2 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | PNP - Pre-Biased |
Part Status: | Discontinued at Digi-Key |
Packaging: | Tape & Reel (TR) |
Description
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<p>The BCR 158L3 E6327 single, pre-biased transistor is a type of bipolar junction transistor (BJT) that works in much the same way as any other BJT. It is a three-layer semiconductor device that functions by controlling the flow of current between the collector and the emitter. The device is made up of either one layer of P-type material sandwiched between two layers of N-type material, or vice versa. The current flows from the emitter through the base and into the collector, and is regulated by the amount of voltage applied to the base from outside sources. This allows the device to work as an amplifier, switching circuit, or gain element.</p><p>The BCR 158L3 E6327 is a single, pre-biased transistor, meaning that the device contains an added bias current. This bias current helps to reduce the amount of on-resistance that is present in the transistor, and therefore helps to increase its robustness, reliability, and overall performance. The device also has a low breakdown voltage, making it suitable for low voltage applications. It also has low thermal resistance and low saturation voltage, allowing it to function even at higher temperatures and still maintain its performance characteristics.</p><p>The BCR 158L3 E6327 is suitable for a variety of applications. It can be used as a general-purpose amplifier, digital logic device, or as a switching element in various types of equipment. It can also be used in a wide range of MOSFET devices, such as wireless and optical transmitters, receivers, and amplifiers. The device is also quite robust, so it can be used in a wide range of environments, and is especially well-suited for industrial and automotive applications, where it is likely to be subjected to extreme temperatures, high mechanical shock, and vibration.</p><p>In conclusion, the BCR 158L3 E6327 is a single, pre-biased transistor that works in much the same way as any other bipolar junction transistor. It is a three-layer semiconductor device that functions by controlling the flow of current between the collector and the emitter. The device contains a bias current that helps to reduce the amount of on-resistance present in the device. It is suitable for a variety of applications, including general-purpose amplifiers, digital logic devices, switching elements, MOSFET devices, and other industrial and automotive applications.</p>The specific data is subject to PDF, and the above content is for reference
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