BCR 183L3 E6327

DC Current Gain (hFE) (Min) @ Ic, Vce:	30 @ 5mA, 5V
Base Part Number:	BCR183
Supplier Device Package:	PG-TSLP-3-4
Package / Case:	SC-101, SOT-883
Mounting Type:	Surface Mount
Power - Max:	250mW
Frequency - Transition:	200MHz
Current - Collector Cutoff (Max):	100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic:	300mV @ 500µA, 10mA
Series:	--
Resistor - Emitter Base (R2):	10 kOhms
Resistor - Base (R1):	10 kOhms
Voltage - Collector Emitter Breakdown (Max):	50V
Current - Collector (Ic) (Max):	100mA
Transistor Type:	PNP - Pre-Biased
Part Status:	Discontinued at Digi-Key
Packaging:	Tape & Reel (TR)

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Introduction:BCR 183L3 E6327 is a type of bipolar junction transistor (BJT) which is single and pre-biased. It finds extensive application across a broad range of industries. This article focuses on the BCR 183L3 E6327 application field and its working principle.BCR 183L3 E6327 Application Field:BCR 183L3 E6327 is designed to stand the demands of power controlling applications and is often used in power supplies and transistor circuits. It is also used in VHF and UHF mixing circuits, video signal switching circuits, amplifier circuits and detector circuits.The BCR 183L3 E6327 is a small-signal transistor generally used for low-power and low-voltage applications. It is primarily used in areas such as automotive, audio, and communication electronics. The structure is used to allowing the device to handle high collector currents at a lower impedance.The BCR 183L3 E6327 is available in the TO-220 packaging which helps in dissipating heat easily. Since the package is hermetically sealed, it ensures that edges are protected from outside environment using an airtight seal.Working Principle:The working principle of BCR 183L3 E6327 depends on the n-p-n structure. A n-p-n structure consists of three layers of semiconductor material with different doping present in each layer. The semiconductor material is typically silicon in BJTs.The n-region has more electrons while the p-region has fewer electrons, thus forming the n-p-n structure. When a small amount of current is applied to the base terminal, the transistor starts to conduct current across the collector and emitter.When a voltage is applied to the base terminal of the transistor, the electrons in the n-region move from the n-region to the p-region. This reduces the current flowing from the base terminal to the collector terminal. This then reduces the current flowing from the collector to the emitter terminal, thus reducing the gain of the BJT.Conclusion:The BCR 183L3 E6327 is a versatile bipolar junction transistor (BJT) with applications across signal processing, power controlling, and audio, automotive and communication electronics. Its pre-biased characteristics, hermetically sealed TO-220 packaging, and the n-p-n structure allows it to handle high collector currents at lower impedance. The working principle of the device is based on the n-p-n structure and the movement of electrons from the n-region to the p-region when a voltage is applied to the base terminal.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description