Allicdata Part #: | BCR185L3E6327-ND |
Manufacturer Part#: |
BCR 185L3 E6327 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | TRANS PREBIAS PNP 250MW TSLP-3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | BCR 185L3 E6327 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 70 @ 5mA, 5V |
Base Part Number: | BCR185 |
Supplier Device Package: | PG-TSLP-3-4 |
Package / Case: | SC-101, SOT-883 |
Mounting Type: | Surface Mount |
Power - Max: | 250mW |
Frequency - Transition: | 200MHz |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 10mA |
Series: | -- |
Resistor - Emitter Base (R2): | 47 kOhms |
Resistor - Base (R1): | 10 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | PNP - Pre-Biased |
Part Status: | Discontinued at Digi-Key |
Packaging: | Tape & Reel (TR) |
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BCR 185L3 E6327 is a single, pre-biased bidirectional and bipolar transistor, designed primarily for sampling applications in systems with data rates in excess of 400MB/s, such as in communications and for video or image processing. This device offers superior levels of signal linearity, fast switching speed and excellent power handling characteristics.
The pre-biased characteristic of the transistor enables it to be used as a high speed sampling device. This is achieved by allowing an input signal to be loaded directly into a pre-biased load and then switched at high speed with a minimum of delay. This makes it ideal for applications requiring precise signal control, such as in communications and video or image processing.
The device features a low gate threshold voltage and high gain, making itparticularly suitable for high speed switching applications. The low gate threshold voltage means that it can be used to pass signals at up to 400MB/s, while the high gain makes it ideal for applications requiring precise signal control.
The BCR 185L3 E6327 is also designed for use in a wide variety of other applications. It can be used to control the flow of currents in power supplies and other circuits, and its low gate threshold voltage makes it ideal for switching high frequencies. It can also be used as an amplifier in audio and video applications, and can be used in high voltage applications up to 150V.
The working principle of the BCR 185L3 E6327 involves biasing the unit with a positive or negative supply voltage and creating a current path between the collector-emitter terminals. When a signal is applied to the base terminal, it creates a gain in the current flow between the emitter and collector terminals.
The gain is determined by the ratio between the voltage applied to the base and the voltage between the collector and emitter terminals. This makes the device useful in high speed applications since the gain can be adjusted to ensure that the signal is not distorted by high frequency noise.
In addition to its high speed applications, the BCR 185L3 E6327 can also be used for power supply control. The low gate threshold voltage allows the current flow to be maintained at a low level even when the supply voltage drops. This helps to ensure that the output power supply is stable and reliable.
The BCR 185L3 E6327 is an ideal single, pre-biased bipolar transistor for a wide range of applications requiring fast switching speeds, high levels of signal linearity and excellent power handling characteristics. Its pre-biased characteristic enables it to be used as a high speed sampling device, while its low gate threshold voltage and high gain make it ideal for controlling high frequencies and power supply control.
The specific data is subject to PDF, and the above content is for reference
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