BCR 191F E6327

DC Current Gain (hFE) (Min) @ Ic, Vce:	50 @ 5mA, 5V
Base Part Number:	BCR191
Supplier Device Package:	PG-TSFP-3
Package / Case:	SOT-723
Mounting Type:	Surface Mount
Power - Max:	250mW
Frequency - Transition:	200MHz
Current - Collector Cutoff (Max):	100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic:	300mV @ 500µA, 10mA
Series:	--
Resistor - Emitter Base (R2):	22 kOhms
Resistor - Base (R1):	22 kOhms
Voltage - Collector Emitter Breakdown (Max):	50V
Current - Collector (Ic) (Max):	100mA
Transistor Type:	PNP - Pre-Biased
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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Introduction

The BCR 191F E6327 is a type of bipolar junction transistor, or BJT. It is a single, pre-biased device and is used in a variety of applications. This article will explain the application fields and workings of the BCR191F E6327.

Application Fields

The BCR 191F E6327 can be used for a variety of purposes, including:

• Amplification of signals
• Power transistors, delivering high currents with low losses
• High-speed, low voltage switching
• Motor drives
• Audio and video amplifiers
• Switching and amplifier stages

The BCR191F E6327 is suitable for use in a range of different applications and can be used in both low wattage and high wattage applications. It also has a high breakdown voltage so it can be used in situations where a wide range of voltages is needed.

Working Principle

The BCR 191F E6327 is an NPN type transistor, meaning it can conduct electricity in a single direction. It operates by using the movement of electrons between two separate layers, the base and the collector. Electrons move from the base to the collector when a small voltage is applied, allowing a larger current to flow from the collector to the base. This increase in current is the amplification of the signal.The BCR 191F E6327 has two PN junctions, one from the base to collector and one from the collector to emitter. The two junctions are linked so that when a voltage is applied to the base, the collector-emitter junction provides current amplification. This amplification can then be used for a variety of applications, such as amplifier stages, audio and video amplifiers and power transistors.

Conclusion

The BCR191F E6327 is a type of bipolar junction transistor, or BJT. It is a single, pre-biased device and is suitable for use in a range of different applications, including amplification of signals, power transistors, audio and video amplifiers, switching and amplifier stages. It operates by using the movement of electrons between two separate layers, the base and the collector, allowing for a higher current to flow from the collector to the base which can then be used for various applications.

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