BCR 196L3 E6327

DC Current Gain (hFE) (Min) @ Ic, Vce:	50 @ 5mA, 5V
Base Part Number:	BCR196
Supplier Device Package:	PG-TSLP-3-4
Package / Case:	SC-101, SOT-883
Mounting Type:	Surface Mount
Power - Max:	250mW
Frequency - Transition:	150MHz
Current - Collector Cutoff (Max):	100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic:	300mV @ 500µA, 10mA
Series:	--
Resistor - Emitter Base (R2):	22 kOhms
Resistor - Base (R1):	47 kOhms
Voltage - Collector Emitter Breakdown (Max):	50V
Current - Collector (Ic) (Max):	70mA
Transistor Type:	PNP - Pre-Biased
Part Status:	Discontinued at Digi-Key
Packaging:	Tape & Reel (TR)

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Biasing of a bipolar transistor is a crucial parameter to consider during its operation. It determines the current flow and its output power. The BCR196L3 E6327 is a single, pre-biased transistor designed for low power applications. In this article, we will discuss its application field and working principle.The BCR196L3 E6327 is a single pre-biased NPN silicon transistor used in low power applications, such as LED lighting, electronic control and power management. This transistor is designed to operate at high breakdown voltages up to 160V. It has a collector-to-emitter voltage rating of 60V, a collector-to-base voltage rating of 80V, and an emitter-to-base voltage rating of 10V. The BCR196L3 E6327 also has an excellent linearity for low power applications. It has an hFE of 100-500 and its current gain is up to 250mA. It is able to operate in a wide range temperature from -60℃ to +150℃. With its high breakdown voltage, the transistor can handle overvoltage situations with ease.The BCR196L3 E6327 is also suitable for use in low-power switching applications, such as in electronic equipment, automotive devices, and consumer electronics. Its low saturation voltage and high gain make it an ideal choice for applications where low-voltage operation is required.The working principle of the BCR196L3 E6327 is simple. It uses the base-emitter junction to control the voltage, current and power of the collector-emitter junction. This is done by applying a biasing voltage at the base, allowing the collector-emitter junction to either be in a forward bias or reverse bias state. When the NPN transistor is in a forward bias state, the electrons are drawn from the emitter to the collector through the base, resulting in a current flow from the collector to the emitter. This results in a voltage drop across the base-emitter junction, which causes the collector-emitter junction to become forward biased, allowing the current flow to continue. When the NPN transistor is in a reverse bias state, the electrons in the base are repelled back to the emitter, resulting in no current flow from the collector to the emitter. This prevents a voltage drop and keeps the collector-emitter junction in a reverse bias state.In conclusion, the BCR196L3 E6327 is an ideal transistors for low power applications, due to its low saturation voltage and wide temperature range. Its simple biasing operation makes it easy to use and its high breakdown voltage makes it suitable for various overvoltage situations. With its high current gain and excellent linearity, this transistor can offer a great low power performance for any application.

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