BCR 196T E6327 Allicdata Electronics
Allicdata Part #:

BCR196TE6327-ND

Manufacturer Part#:

BCR 196T E6327

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: TRANS PREBIAS PNP 250MW SC75
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: BCR 196T E6327 datasheetBCR 196T E6327 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V
Base Part Number: BCR196
Supplier Device Package: PG-SC-75
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Power - Max: 250mW
Frequency - Transition: 150MHz
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Series: --
Resistor - Emitter Base (R2): 22 kOhms
Resistor - Base (R1): 47 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 70mA
Transistor Type: PNP - Pre-Biased
Part Status: Discontinued at Digi-Key
Packaging: Tape & Reel (TR) 
Description

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The BCR 196T E6327 is a high performance single pre-biased bipolar transistor used for a variety of application fields. Its unique internal structure gives it a wide range of applications, allowing it to be used in a variety of high frequency and high power applications. Additionally, the BCR 196T E6327 is made using advanced semiconductor processing techniques, ensuring its robustness and performance.

The BCR 196T E6327 is a pre-biased transistor, which means it has a current flowing between the base and the collector in the off-state. This specific type of transistor has a unique structure that provides a number of advantages over other types of transistors. One of the primary advantage is that it can operate with a relatively low collector current compared to normal BJTs. This allows for greater efficiency in power supply designs.

The BCR 196T E6327 is suitable for a wide range of applications, such as audio preamplifiers, power amplifiers, small signal switching, and driver stages. Additionally, the BCR 196T E6327 can be used in a wide variety of high power, high frequency, and low voltage applications. It is also suitable for general purpose transistor applications, as it is capable of handling large signal swings with little power dissipation.

The BCR 196T E6327 includes an active region that acts as a semiconductor junction between the base and the collector. This active region controls the current flow between the two regions. When a voltage is applied to the base, it controls the amount of current that passes through the active region to the collector. The active region also acts to isolate the base and collector circuits, allowing the collector to operate at a different voltage than the base voltage.

The BCR 196T E6327 has a maximum gain of 150, ensuring that it has excellent power and frequency characteristics. Additionally, this transistor has a low saturation voltage of 0.2V, which allows for optimal performance in low voltage and high current applications. Additionally, the BCR 196T E6327 features a breakdown voltage of 15V, making it suitable for use in higher voltage applications.

The BCR 196T E6327 is a good choice for a wide range of circuit designs as it offers excellent performance and is relatively easy to use. It is also a good choice for use in special-purpose applications, due to its wide range of operational characteristics. Additionally, the BCR 196T E6327 is cost-effective, which makes it a great alternative to more expensive transistors.

The specific data is subject to PDF, and the above content is for reference

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