Allicdata Part #: | BCR503B6327-ND |
Manufacturer Part#: |
BCR 503 B6327 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | TRANS PREBIAS NPN 300MW SOT23-3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | BCR 503 B6327 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 40 @ 50mA, 5V |
Base Part Number: | BCR503 |
Supplier Device Package: | SOT-23-3 |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Mounting Type: | Surface Mount |
Power - Max: | 330mW |
Frequency - Transition: | 100MHz |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 2.5mA, 50mA |
Series: | -- |
Resistor - Emitter Base (R2): | 2.2 kOhms |
Resistor - Base (R1): | 2.2 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 500mA |
Transistor Type: | NPN - Pre-Biased |
Part Status: | Discontinued at Digi-Key |
Packaging: | Tape & Reel (TR) |
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BCR 503 B6327 Application Field and Working Principle
The BCR 503 B6327 is a Single, Pre-Biased Transistor (Bipolar Junction Transistor, BJT). It is designed for use in a range of electronic amplification and signal switching applications, especially power and audio amplification. This transistor is a three-terminal, low-voltage switching device. It is constructed with two PNP-type semiconductor layers, separated by a thin base region. BCR 503 B6327 has a high power handling capacity, wide current range and low On-state voltage.
Properties of BCR 503 B6327
The following are some of the major features of BCR 503 B6327:
- High current handling capacity: up to 400 mA.
- Low On-state voltage: typically 0.2V.
- Wide operating voltage range: from -50V to +50V.
- High-frequency performance: up to 10 MHz.
- High power handling capacity: up to 500 Watts.
Application Fields
BCR 503 B6327 has a wide range of applications, which include:
- High-power audio amplification.
- Power switching applications.
- Robotics control.
- Home automation.
- Switch-mode power supplies.
Working Principle
The working principle of the BCR 503 B6327 involves the biasing of its two PNP layers. The PNP layer on top is biased with a positive voltage, while the lower PNP layer is biased with a negative voltage. When a small voltage is applied to the base of the transistor, it causes an electrostatic charge to flow between the two layers. This charge allows current to flow between the collector and emitter, producing an amplification or switching effect.
The main advantage of this transistor is its low distortion and high reliability. This makes it suitable for high-power audio amplification. It is also able to withstand high voltage and current surges.
The BCR 503 B6327 is an excellent choice for a wide range of electronics applications. It is highly reliable, efficient, and has a wide current range. It is also very affordable and can be easily found in electronics stores and online stores.
The specific data is subject to PDF, and the above content is for reference
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