Allicdata Part #: | BCR10FM-14LJ#BB0-ND |
Manufacturer Part#: |
BCR10FM-14LJ#BB0 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Renesas Electronics America |
Short Description: | TRIAC 800V 10A TO220FP |
More Detail: | TRIAC Standard 800V 10A Through Hole TO-220FP |
DataSheet: | BCR10FM-14LJ#BB0 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
Triac Type: | Standard |
Voltage - Off State: | 800V |
Current - On State (It (RMS)) (Max): | 10A |
Voltage - Gate Trigger (Vgt) (Max): | 1.5V |
Current - Non Rep. Surge 50, 60Hz (Itsm): | 100A @ 60Hz |
Current - Gate Trigger (Igt) (Max): | 30mA |
Configuration: | Single |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220FP |
Base Part Number: | BCR10 |
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Thyristors - TRIACs: BCR10FM-14LJ#BB0 Application Field and Working Principle
A TRIAC is a three terminal semiconductor device for controlling current with either alternating or direct current. This type of thyristor is a bidirectional device consisting of three terminals (MT1, MT2, and the gate) that are controlled by the proper application of electrical signals. TRIACs are used for applications requiring frequent or fast bidirectional control.
The BCR10FM-14LJ#BB0 is a bidirectional phase matched, high-sensitive and low leakage current TRIAC device. It offers double-sided current limitation and double-sided voltage limitation. It has a direct gate current drive and utilizes thick silicon layers, including inherent thermal protection, dynamic and static dv/dt protection and low reverse voltage leakage current abilities.
Applications
The BCR10FM-14LJ#BB0 is a MONEL thyristor designed with specific performance characteristics suited for low to medium power switching applications. Examples include, but are not limited to, AC motors and solenoid valves, static relays, lighting control, light dimming, and other small power control applications.
Working Principle
The working principle of the BCR10FM-14LJ#BB0 is based on the movement of charge carriers. When forward or reverse voltages are applied across the MT1, MT2, and gate terminals, it causes a flow of current through the device. In a forward voltage, electrons move from the emitter of the device to the anode in the forward direction, allowing current to flow. In a reverse voltage, electrons move from the anode to the emitter in the reverse direction, blocking the flow of current.
The BCR10FM-14LJ#BB0 utilizes a direct gate current drive. This means that, when the proper gate current is applied, the current will flow in either direction (forward or reverse). The device also has internal switching characteristics which help prevent it from being permanently damaged during a high collection event. When the device is activated, the maximum current is limited to ~10A, and the voltage allowed to continue is ~1.41V.
Additionally, the BCR10FM-14LJ#BB0 is engineered with thick silicon layers and a double-sided current limitation function. This allows the device to handle higher amounts of current and voltage, while maintaining high-speed switching and strong protection against static/dynamic over-voltage and over-temperature conditions.
Conclusion
The structure, performance and features of the BCR10FM-14LJ#BB0 make it an excellent choice for low to medium power switching applications. Its double-sided current and voltage limitation functions combined with the high-sensitivity, low leakage current capabilities make it an ideal choice for small to medium power control applications. Additionally, its direct gate current drive and its ability to handle large amounts of current and voltage, make it a great choice for applications where speed and protection are of utmost importance.
The specific data is subject to PDF, and the above content is for reference
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