BCR573E6327HTSA1 Allicdata Electronics
Allicdata Part #:

BCR573E6327HTSA1TR-ND

Manufacturer Part#:

BCR573E6327HTSA1

Price: $ 0.04
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: TRANS PREBIAS PNP 0.33W SOT23-3
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: BCR573E6327HTSA1 datasheetBCR573E6327HTSA1 Datasheet/PDF
Quantity: 1000
18000 +: $ 0.02980
Stock 1000Can Ship Immediately
$ 0.04
Specifications
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
Base Part Number: BCR573
Supplier Device Package: SOT-23-3
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Power - Max: 330mW
Frequency - Transition: 150MHz
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Series: --
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 1 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 500mA
Transistor Type: PNP - Pre-Biased
Part Status: Last Time Buy
Packaging: Tape & Reel (TR) 
Description

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The BCR573E6327HTSA1 is a single pre-biased transistor manufactured to be compatible with various digital circuit designs, including industrial automation and automotive applications. The benefit of a pre-biased device is that it has already undergone some form of current bias in order to reduce the amount of load on the power supply. Thus, the device can easily integrate into a system, minimizing the need for external components or bias circuits.

Structure of BCR573E6327HTSA1

The BCR573E6327HTSA1 is a type of bipolar junction transistor (BJT), consisting of a collector, base and emitter electrodes. The collector is responsible for current flow from the power supply to the device, while the base and emitter are used to control the amount of current flowing to and from the collector. When the base electrode is activated, current is allowed to flow through the collector, causing an increase in voltage at the collector output.

Working Principle of BCR573E6327HTSA1

The BCR573E6327HTSA1 operates using the principle of minority carrier injection. This means that current is injected into the base region via a reverse-biased junction formed between the emitter and base electrodes. This current is then passed through the base layer to the collector, creating an increase in the current flowing through the device. This increase in current induces an electrical field across the collector-base junction, creating an increase in voltage at the collector output of the device.

Application Field of BCR573E6327HTSA1

The BCR573E6327HTSA1 is suitable for use in various industrial automation and automotive applications. It can be used as an amplifier, an oscillator, a rectifier, or in other analog and digital circuit applications. The device is designed for use in DC-DC converters and bridged rectifiers, where it can be used as a switch and amplifier to regulate the current flow. It can also be used in pulse-width modulation circuits and can be used as a transistor switch in automotive electronics such as airbag control units.

Conclusion

The BCR573E6327HTSA1 is a single pre-biased bipolar junction transistor designed for use in industrial automation and automotive applications. It utilizes the principle of minority carrier injection to control the current flow between the collector and base electrodes. The device is suitable for use in amplifiers, oscillators, rectifiers, DC-DC converters and bridged rectifiers, where it can be used as a switch and amplifier. It can also be used in automotive electronics such as airbag control units.

The specific data is subject to PDF, and the above content is for reference

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