BD7F200EFJ-LBE2

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BD7F200EFJ-LBE2 Application Field and Working Principle

The BD7F200EFJ-LBE2, developed by Rohm Semiconductor company, is part of their SLLM™ series of FETs or Field Effect Transistors. This series of FETs is used in a range of applications, from DC-DC converters to voltage regulators. The primary benefit of these FETs is their small size and low power usage, making them a great option for those who need low power, high efficiency solutions.

As part of the SLLM series, the BD7F200EFJ-LBE2 is a highly efficient, low power FET. It is designed specifically for use in DC-DC converters and voltage regulators, making it ideally suited for such uses. It achieves very low source-drain on-resistance and good stability over a wide temperature range, while consuming only a small amount of current. It has a maximum continuous drain current of 1.2A and a drain-source breakdown voltage of 230V.

In addition to its low power usage, the BD7F200EFJ-LBE2 features excellent temperature tolerance and very low noise levels. This makes it a great choice for space-constrained applications and other applications that require very low noise levels. The producct also has an integrated overcurrent protection circuit which prevents the FET from sustaining over-current damage.

The primary benefit of the BD7F200EFJ-LBE2 is its low power usage, as well as its excellent temperature tolerance. This makes it ideal for use in portable and other devices that require high efficiency and low power usage. In addition, its overcurrent protection circuit makes it a great choice for applications with the potential for over-currents.

The BD7F200EFJ-LBE2 is an excellent choice for DC-DC converters and voltage regulators. It is a highly efficient and low power FET, with excellent temperature tolerance and very low noise levels. Its integrated overcurrent protection circuit makes it a great choice for applications with the potential for over-currents. This makes the BD7F200EFJ-LBE2 an ideal choice for those seeking low power, high efficiency solutions.

Working Principle

As a Field Effect Transistor, the BD7F200EFJ-LBE2 works using the principles of the MOSFET, a metal-oxide-semiconductor field-effect transistor. It consists of three terminals, called the source, drain, and gate. By applying a voltage between the source and drain terminals, the channel between these two terminals can be controlled by applying a voltage to the gate terminal. This causes an electric field to form between the source and drain terminals, allowing current to flow between these two points.

In the case of the BD7F200EFJ-LBE2, this voltage applied to the gate terminal is supplied by a voltage regulator. This voltage regulator supplies a voltage that is proportional to the supply voltage of the system. This means that the FET will always be in the same state, regardless of changes in the supply voltage. This makes it an ideal choice for applications with a wide range of supply voltages.

Because of its low power consumption and excellent temperature tolerance, the BD7F200EFJ-LBE2 is a great choice for DC-DC converters and voltage regulators. Its high efficiency and low noise levels make it a good choice for applications that require compact, low power solutions. Its integrated overcurrent protection circuit further enhances its usefulness in applications with the potential for over-currents.

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