BFQ19SH6327XTSA1

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	15V
Frequency - Transition:	5.5GHz
Noise Figure (dB Typ @ f):	3dB @ 1.8GHz
Gain:	7dB
Power - Max:	1W
DC Current Gain (hFE) (Min) @ Ic, Vce:	70 @ 70mA, 8V
Current - Collector (Ic) (Max):	120mA
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-243AA
Supplier Device Package:	SOT-89-3

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BFQ19SH6327XTSA1 Transistors - Bipolar (BJT) - RF

BFQ19SH6327XTSA1 transistors are Bipolar Junction Transistors (BJT) designed for Radio Frequency (RF) applications. The BFQ19SH6327XTSA1, commonly referred to as an NPN small-signal RF low-noise transistor, is widely used for RF amplifier and mixer circuits, as well as for small signal amplification in a variety of different types of radar and communications circuits.

Features

The BFQ19SH6327XTSA1 transistor has a variety of features that make it ideal for RF applications. Firstly, it has a high gain-bandwidth product (ft) of over 6GHz, which allows the transistor to provide high gain even at very high frequencies. This makes it suitable for higher performance applications. Secondly, it has a very low noise figure of 0.8dB, which makes it suitable for applications where low noise performance is desired. Finally, it has a good input return loss of 20dB, meaning that it can achieve reasonable input matching even at higher frequencies. The other key specifications of the BFQ19SH6327XTSA1 are a collector-emitter voltage of 30V, a collector-base voltage of 40V, and a maximum collector-emitter current of 150mA.

Applications

BFQ19SH6327XTSA1 transistors can be used in a wide range of applications due to its high gain and low noise characteristics. It is widely used in various Low Noise Amplifier (LNA) and Low Noise Block (LNB) applications, such as directional radio antennas, television receivers, and satellite receivers. It can also be used in VHF and UHF radios, radio direction-finding (RDF) circuits, FM receiver amplifiers, and ultra-wideband video transmission links.

Working Principle

Bipolar Junction Transistors work by controlling the amount of current between two terminals known as the collector and the emitter. The base terminal is also used to control the current flow, depending on the voltage applied to the base. This regulated current flow is then used to amplify or switch signals.The BFQ19SH6327XTSA1 is a type of NPN transistor, which means that when there is a voltage applied to the base terminal, current will flow from the collector terminal to the emitter terminal. When no voltage is applied to the base, the transistor will behave like an open circuit, and no current will flow. The working principle of the BFQ19SH6327XTSA1 is similar to other NPN transistors, with the main difference being that it is designed specifically for RF applications, so it has higher gain and lower noise characteristics.

Conclusion

The BFQ19SH6327XTSA1 is a type of Bipolar Junction Transistor (BJT) designed specifically for RF applications. It has a high gain-bandwidth product, a low noise figure, good input return loss, and can be used in a variety of different applications, including Low Noise Amplifier (LNA) and Low Noise Block (LNB) designs. It works by controlling the amount of current flowing between the collector and emitter terminals, and its function is similar to that of other NPN transistors.

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