Allicdata Part #: | BFR460L3E6327XTMA1TR-ND |
Manufacturer Part#: |
BFR460L3E6327XTMA1 |
Price: | $ 0.07 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | TRANS RF NPN 5.8V 50MA 3TSLP |
More Detail: | RF Transistor NPN 5.8V 50mA 22GHz 200mW Surface Mo... |
DataSheet: | BFR460L3E6327XTMA1 Datasheet/PDF |
Quantity: | 1000 |
15000 +: | $ 0.06258 |
30000 +: | $ 0.05740 |
75000 +: | $ 0.05524 |
105000 +: | $ 0.05308 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 5.8V |
Frequency - Transition: | 22GHz |
Noise Figure (dB Typ @ f): | 1.1dB ~ 1.35dB @ 1.8GHz ~ 3GHz |
Gain: | 16dB |
Power - Max: | 200mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 90 @ 20mA, 3V |
Current - Collector (Ic) (Max): | 50mA |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SC-101, SOT-883 |
Supplier Device Package: | PG-TSLP-3-1 |
Base Part Number: | BFR460 |
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The BFR460L3E6327XTMA1 is an advanced type of transistor classified as a bipolar junction transistor (BJT) specifically designed to operate in the radio frequency (RF) range. It belongs to a new family of RF transistors that use specific design features to minimize noise associated with RF applications and maximize gain. It is packaged in a SOT-323 surface mountable plastic body and features a very high gain that is almost identical to the highest gain type BJTs.
The BFR460L3E6327XTMA1 is mainly suited for cellular applications, such as mobile or wireless communication. It can also be used for other RF applications, such as radio transceivers, amplifiers, and high frequency switching circuits. Because of its low noise performance, it can be used in radio frequency radio link circuits, where noise is a major issue.
The BFR460L3E6327XTMA1 works by amplifying the input signal applied to its Base terminal. The amplified output is delivered at the Collector terminal. The Emitter terminal is connected to the ground. The amount of gain is determined by the relationship between the collector current, Ic, and the base current, Ib. The basic relationship is: Ic=α*Ib, where α is the transconductance gain of the transistor.
The BFR460L3E6327XTMA1 also features a high-frequency transition frequency, ft, of 12.5GHz, which greatly increases the operating range for many applications. This high frequency allows it to amplify signals in the RF range efficiently, reducing power consumption. It also has good thermal stability, making it resistant to thermal stress.
The BFR460L3E6327XTMA1 is a high performance, low noise, and low power consumption transistor, making it an ideal solution for RF applications. It is also reliable, giving extended life in applications requiring reliable performance. Thanks to its small size and low power consumption, it is ideal for applications with a small form factor and limited power requirements. In addition, its advanced characteristics make it suitable for use in products requiring high performance and reliability.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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