BFR720L3RHE6327XTSA1

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	4.7V
Frequency - Transition:	45GHz
Noise Figure (dB Typ @ f):	0.5dB ~ 0.8dB @ 1.8GHz ~ 6Ghz
Gain:	24dB
Power - Max:	80mW
DC Current Gain (hFE) (Min) @ Ic, Vce:	160 @ 13mA, 3V
Current - Collector (Ic) (Max):	20mA
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	SC-101, SOT-883
Supplier Device Package:	PG-TSLP-3
Base Part Number:	BFR720

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Introduction

BFR720L3RHE6327XTSA1 is a monolithic integrated circuit designed for transistors - bipolar (BJT) - RF applications. It is used extensively in modern high-frequency amplifiers, oscillators and other devices in the RF/microwave technology. It is also used in integrated circuits, microwave communication, digital switching, and communication systems. The device is often referred to as a “transistor-on-chip” due to the monolithic integrated structure.

Application Field

The BFR720L3RHE6327XTSA1 is designed for use in a variety of low-frequency to high-frequency applications in the RF/microwave technology. It has excellent high-frequency characteristics when used in amplifiers, oscillators, receivers, and other radio frequency-sensitive applications. The device is often seen in communication systems, such as cellular phones, base stations, and radio networks, where the high-frequency switching and amplification properties of the device makes them extremely desirable components.The device is also used in various applications in the fields of radar, microwave communication, satellite communication, and digital switching. Its ability to operate up to 4 GHz and its high-frequency current amplification and linearization characteristics make it an ideal device in these fields. Its low power consumption also makes it highly desirable in power-sensitive applications.

Working Principle

The BFR720L3RHE6327XTSA1 works by using bipolar junction transistors (BJT) which have three terminals: the base, the collector, and the emitter. The base-emitter junction is forward biased when a positive current is applied and reversed biased when a negative current is applied. The collector-base junction is reverse biased and the emitter-base junction is forward biased when a voltage is applied.When a positive current flows through the base, electrons are pushed out of the base and into the collector, which creates an electron current in the collector. This current is known as the collector-emitter current, and it is responsible for providing the device with its linear gain and current amplification characteristics. The device also has two other independent transistors built into it; an auxiliary transistor and a sense transistor. The auxiliary transistor is normally reverse biased and is used to reduce the device’s power consumption. The sense transistor is forward biased and is used for sensing external signals.

Conclusion

The BFR720L3RHE6327XTSA1 is an excellent choice for transistors - bipolar (BJT) - RF applications. Its high-frequency characteristics and low power consumption make it ideal for a range of applications in the RF/microwave technology and digital switching. The device utilizes a BJT structure which has three terminals (base, collector, and emitter) which are responsible for providing the device with its linear gain and current amplification characteristics. Additionally, the device also has an auxiliary transistor and a sense transistor which can be used to reduce power consumption or sense external signals.

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