Allicdata Part #: | BFR840L3RHESDE6327XTSA1TR-ND |
Manufacturer Part#: |
BFR840L3RHESDE6327XTSA1 |
Price: | $ 0.14 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | TRANS RF BIPO NPN 35MA TSLP-3 |
More Detail: | RF Transistor NPN 2.6V 35mA 75GHz 75mW Surface Mou... |
DataSheet: | BFR840L3RHESDE6327XTSA1 Datasheet/PDF |
Quantity: | 1000 |
15000 +: | $ 0.12451 |
30000 +: | $ 0.11806 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 2.6V |
Frequency - Transition: | 75GHz |
Noise Figure (dB Typ @ f): | 0.5dB @ 450MHz |
Gain: | 27dB |
Power - Max: | 75mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 150 @ 10mA, 1.8V |
Current - Collector (Ic) (Max): | 35mA |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SC-101, SOT-883 |
Supplier Device Package: | PG-TSLP-3 |
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The BFR840L3RHESDE6327XTSA1 is a special type of transistor belonging to the bipolar junction transistor (BJT) category. It is further classified as RF (radio frequency) transistor due to its peripheral application. When compared to the other transistors available in the market, this transistor model is huge, powerful and more efficient in its working.
The application field and use of this transistor are primarily related to the electronics industry. It can be used in a variety of electronic equipment ranging from mobile phones to amplifiers. Moreover, it can be used in the automotive industry as an efficient amplifier and power supply. This transistor can also be used in radio, TV, speakers and other electronic devices. It is also suitable for communication devices, RF amplifiers, RF applications and microwave circuits.
The working principle of BFR840L3RHESDE6327XTSA1 is based on the bipolar junction transport (BJT) model. The transistor consists of three terminals which are designated as the collector, the base and the emitter. The two terminals, the base and collector are separated by the semiconductor layer of the transistor. The current in the semiconductor layer is basically controlled by the input current applied to the base. When the input current is increased to the base, it causes the collector current to increase at the same pace and thus amplifying the signal.
The main advantage of using this special transistor model is its higher voltage gain, higher current gain and higher power handling capacity compared to other transistor models. It is usually employed for high frequency applications since its higher current gain makes it ideal for such requirements. Moreover, its usage also offers improved signal gain and higher power efficiency when compared to standard transistors. This helps the electronics industry to reduce losses and to enhance the performance of the circuits.
In conclusion, the BFR840L3RHESDE6327XTSA1 is a special type of transistor belonging to the bipolar junction transistor (BJT) which is further classified as RF technology. The application of this transistor model is primarily related to the electronics industry. Its main advantages include higher voltage gain, higher current gain and higher power handling capacity, as well as improved signal gain and higher power efficiency when compared to standard transistors.
The specific data is subject to PDF, and the above content is for reference
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