Allicdata Part #: | BFY193PZZZA1-ND |
Manufacturer Part#: |
BFY193PZZZA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | TRANS RF NPN 12V 80MA MICRO-X1 |
More Detail: | RF Transistor NPN 12V 80mA 7.5GHz 580mW Surface Mo... |
DataSheet: | BFY193PZZZA1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 12V |
Frequency - Transition: | 7.5GHz |
Noise Figure (dB Typ @ f): | 2.3dB ~ 2.9dB @ 2GHz |
Gain: | 12.5dB ~ 13.5dB |
Power - Max: | 580mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 50 @ 30mA, 8V |
Current - Collector (Ic) (Max): | 80mA |
Operating Temperature: | 200°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | MICRO-X1 |
Supplier Device Package: | MICRO-X1 |
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The BFY193PZZZA1 is a Bipolar (BJT) with a wide range of applications in the Radio Frequency (RF) band. It is used in various applications such as amplifiers, modulators, frequency converters, signal switches, logic gates, and many more. The device is also suitable for applications where high switching speed and high linearity are needed.
The BFY193PZZZA1 is a NPN (Negative-Positive-Negative) bipolar junction transistor. It features a most gain bandwidth (fT) of 10 GHz and an upper transition frequency (fTmax) of 12 GHz. It has a low noise figure of 0.7dB at 1GHz and a typical power gain of 15 dB at 10GHz. This device has a typical transition frequency of 400MHz and is capable of handling a maximum of 10 milliwatts of power.
The working principle of the BFY193PZZZA1 is quite straightforward. It is basically an electrically operated switch, which is made up of two junctions. A base junction, which controls the flow of current, and the emitter and collector junctions, which determine the output of the device. When a current is passed through the base, the collector voltage rises, allowing current to pass through the emitter. This results in the output current being passed to the load.
The BFY193PZZZA1 is ideal for applications where high levels of power and RF switching speed are required. Its low noise figure and high gain bandwidth make it well suited for applications such as in receivers, transceivers, and base station systems. The high linearity of this device ensures high performance in applications like modulators and frequency converters. Finally, its high input impedance makes it compatible with most logic gates, allowing for a wide range of applications.
In summary, the BFY193PZZZA1 is a robust and reliable device designed for high power Radio Frequency applications. It features a high gain bandwidth, low noise figure and high linearity. Given its wide range of applications and its versatile design, it is quickly becoming the transistor of choice for many RF applications.
The specific data is subject to PDF, and the above content is for reference
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