BFY90 Discrete Semiconductor Products |
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Allicdata Part #: | BFY90CS-ND |
Manufacturer Part#: |
BFY90 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Central Semiconductor Corp |
Short Description: | TRANS NPN 30V TO72 |
More Detail: | RF Transistor NPN 15V 25mA 1.4GHz 200mW Through Ho... |
DataSheet: | BFY90 Datasheet/PDF |
Quantity: | 1661 |
Specifications
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 15V |
Frequency - Transition: | 1.4GHz |
Noise Figure (dB Typ @ f): | 5.5dB @ 800MHz |
Gain: | 23dB |
Power - Max: | 200mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 20 @ 25mA, 1V |
Current - Collector (Ic) (Max): | 25mA |
Operating Temperature: | -65°C ~ 200°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-206AF, TO-72-4 Metal Can |
Supplier Device Package: | TO-72 |
Description
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Introduction
Bipolar Field-Effect Transistors (BFY90) are a type of complementary-symmetry power transistor typically used in radio-frequency (RF) applications. As their name implies, they are made up of two bipolar transistors connected with a common gate function. Depending on their designs, they may also consist of additional materials and components. The most common application of BFY90 is switching, linear amplification, and voltage regulation.Applications
BFY90 is designed for very specific applications and used mainly as an RF power amplifier or switch. It is typically implemented in RF circuits where large signal strength and high-power operation are required. It has excellent switching characteristics, with low-noise and high-current capacity, which means it can operate reliably in harsh electrical environments.In terms of linear amplification, BFY90 transistors are used in radio communications and low-noise amplifier (LNA) circuits, where low-noise performance is essential. It is also used as a voltage regulator in many RF circuits, where its excellent power handling capability comes in handy.Construction
A BFY90 transistor consists of two bipolar transistors connected to a shared gate. It is made up of an N-channel device in the form of a PNP-type bottom gate silicon transistor and an N-channel device in the form of an NPN-type top gate silicon transistor. The two transistors are usually connected to a single package anodized or resonant gate base, consisting of metal parts. The metal parts typically have multiple bonding conductive points, allowing for the connection of circuit components.Working Principle
The operation of a BFY90 field-effect transistor is based on its gate-current operation. As current enters the gate-base, it creates electric fields across the base layers, thus allowing current to flow between the PNP and NPN transistors. The electric fields created by the gate current modulate the channel resistance between the two transistors, and are used to control the transfer of both AC and DC electric signals. As a result, the current between the two transistors is regulated.In order for the BFY90 to work efficiently, the gate current must remain constant. To ensure this, the transistor is usually connected to a voltage supply and the voltage level is adjusted to match the desired operating parameters. At higher gate voltages, the two transistors start to conduct, since the PNP and NPN transistors become forward biased. This allows for a higher output current, but with a lower voltage drop.Advantages
BFY90 transistors offer several advantages over other types of FETs. The first is its large gain at high frequencies, which makes it suitable for applications requiring high-performance RF signals. It also has excellent power handling capability, and the small form factor makes it ideal for use in space-restricted applications. Additionally, its high-current capacity makes it suitable for high-power applications, while its low voltage drop allows it to achieve high power efficiency. Lastly, BFY90 transistors are relatively inexpensive compared to other FETs, making it a more cost-effective option in many applications.Conclusion
BFY90 Bipolar Field-Effect Transistors are used in a variety of RF applications, from RF power amplifiers and switches to voltage regulators. Their main features include large gain at high frequencies, high power handling capability, small form factor, high-current capacity, and low voltage drop. The BFY90 is also an economical solution for many RF needs, and its ability to work reliably in harsh electrical environments makes it a good choice for many applications.The specific data is subject to PDF, and the above content is for reference
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