Allicdata Part #: | BGR420H6327XTSA1TR-ND |
Manufacturer Part#: |
BGR420H6327XTSA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | TRANS RF NPN 13V 25MA SOT343 |
More Detail: | RF Transistor NPN 13V 25mA 120mW Surface Mount PG... |
DataSheet: | BGR420H6327XTSA1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 13V |
Frequency - Transition: | -- |
Noise Figure (dB Typ @ f): | 1.5dB ~ 1.7dB @ 400MHz ~ 1.8GHz |
Gain: | -- |
Power - Max: | 120mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: | -- |
Current - Collector (Ic) (Max): | 25mA |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SC-82A, SOT-343 |
Supplier Device Package: | PG-SOT343-4 |
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The BGR420H6327XTSA1 is a monolithic transistor with a frequency of operation above 1 GHz. This device has been designed for use in communication applications, such as satellite TV, wireless and mobile base station front ends, as well as a variety of networking and streaming applications. The BGR420H6327XTSA1 offers exceptional performance and reliability in this wide frequency range, making it ideal for these applications.
The BGR420H6327XTSA1 is a silicon-germanium (SiGe) based vertical MOS transistor. This type of device combines high voltage, low noise and high gain, making it suitable for RF applications. The main feature of this device is that the high carrier mobility of the SiGe material enables it to operate at higher frequencies than typical RF transistors. This is an important factor, as higher frequencies can often provide improved performance and lower power consumption, both of which are highly desirable in this type of application.
In terms of its operation, the BGR420H6327XTSA1 consists of an oscillation source, which injects an alternating current into the device. This current then travels through the SiGe material, creating a traveling wave. This wave creates a varying electric field, which is then converted into a voltage by the output deformation of the device. In this way, the BGR420H6327XTSA1 can be used to convert power from one circuit to another, or to amplify weak signals.
The BGR420H6327XTSA1 is a highly reliable and robust device and has been designed with a number of features to ensure reliable operation. It has a short leads length for easy soldering, and is provided with power stabilizing components for additional protection against overloads. The device is also provided with a temperature-sensing monitoring circuit, which enables it to monitor and protect itself from excessive temperatures.
The thermal and electrical stability of the BGR420H6327XTSA1 makes it ideal for a variety of high-performance and high-frequency applications. It is highly resilient to environmental factors such as humidity, temperature and vibration. It is also extremely power-efficient, consuming only 0.2 W at 10GHz and 0.45 W at 15GHz. The combination of performance, reliability and power efficiency makes the BGR420H6327XTSA1 an excellent choice for a wide range of RF applications.
In summary, the BGR420H6327XTSA1 is an excellent choice for applications that require high frequency operation and high performance. It is a highly reliable and robust device which is capable of operating at frequencies up to 15 GHz. The combination of performance, reliability and power efficiency makes the BGR420H6327XTSA1 an ideal choice for a wide range of RF applications.
The specific data is subject to PDF, and the above content is for reference
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