Allicdata Part #: | BGSF1717MN26E6327XTSA1TR-ND |
Manufacturer Part#: |
BGSF1717MN26E6327XTSA1 |
Price: | $ 0.53 |
Product Category: | RF/IF and RFID |
Manufacturer: | Infineon Technologies |
Short Description: | IC SWITCH RF 26TSNP |
More Detail: | RF Switch IC PG-TSNP-26-3 |
DataSheet: | BGSF1717MN26E6327XTSA1 Datasheet/PDF |
Quantity: | 1000 |
2000 +: | $ 0.47628 |
Series: | * |
Packaging: | Tape & Reel (TR) |
Part Status: | Last Time Buy |
Package / Case: | 26-VFQFN Exposed Pad |
Supplier Device Package: | PG-TSNP-26-3 |
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RF Switches are widely used in the electronics and communications sectors. They are used to control the frequency, power, and other parameters of a system by changing the level of radio frequency signals. BGSF1727MN26E6327XTSA1 is one such device which has been specifically designed to serve multiple applications. It is a high power, single pole double throw SPDT, microwave switch, capable of providing excellent performance in the range of 10-2700 MHz. The switches are widely used in satellite-based communications, mobile phones, cellular networks, base station antennas, and other communication systems.
Working Principle of BGSF1727MN26E6327XTSA1
The BGSF1727MN26E6327XTSA1 is a high power SPDT RF switch that uses PIN diodes. PIN diodes are semiconductor devices which have three terminals. The cathode is connected to a DC voltage, while the anode is connected to the ground and the center contact, or the gate, is connected to the RF input. When a bias voltage is applied to the gate terminal, a current flows through the diode which is proportional to the voltage. This current is used to bias the junction, allowing the switch to operate in either a fully on (linear) or a partially on (nonlinear) state. In the fully on (linear) state, the RF input is connected to the output and no power reduction is observed. In the partially on (nonlinear) state, the RF input is connected to the output but an attenuation is observed due to the nonlinearity of the PIN diode.
Characteristics and Applications of BGSF1727MN26E6327XTSA1
The BGSF1727MN26E6327XTSA1 has a DC voltage range from 5V- 28V and a maximum power rating of 50W, making it suitable for use in a variety of applications. It also has a low insertion and low VSWR losses, making it ideal for use in applications such as satellite-based communication, cellular base stations, mobile phones, and more. The switch is designed to work within a frequency range of 10-2700 MHz and has an isolation of 105 dB at 10MHZ. It is also suitable for operation in a temperature range of -40C to +85C.
The BGSF1727MN26E6327XTSA1 provides a cost-effective solution for switching high power RF signals. It is also highly reliable and provides excellent performance in terms of linearity and isolation. The switch is suitable for use in applications such as satellite-based communication, cellular base stations, mobile phones, and more. Furthermore, it is designed to work in a temperature range of -40C to +85C, so it can handle extreme conditions with ease. The switch also provides a wide range of options for selecting the switching states, making it an ideal choice for controlling the power and other parameters of a system.
The specific data is subject to PDF, and the above content is for reference
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