Allicdata Part #: | BPW82-ND |
Manufacturer Part#: |
BPW82 |
Price: | $ 0.75 |
Product Category: | Sensors, Transducers |
Manufacturer: | Vishay Semiconductor Opto Division |
Short Description: | PHOTODIODE PIN SV 950NM |
More Detail: | Photodiode 950nm 100ns 130° 2-DIP |
DataSheet: | BPW82 Datasheet/PDF |
Quantity: | 4000 |
1 +: | $ 0.68040 |
10 +: | $ 0.55314 |
25 +: | $ 0.42538 |
100 +: | $ 0.38273 |
250 +: | $ 0.34020 |
500 +: | $ 0.28917 |
1000 +: | $ 0.23814 |
2500 +: | $ 0.22623 |
5000 +: | $ 0.22113 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
Wavelength: | 950nm |
Color - Enhanced: | -- |
Spectral Range: | 790nm ~ 1050nm |
Diode Type: | PIN |
Responsivity @ nm: | -- |
Response Time: | 100ns |
Voltage - DC Reverse (Vr) (Max): | 60V |
Current - Dark (Typ): | 2nA |
Active Area: | 7.5mm² |
Viewing Angle: | 130° |
Operating Temperature: | -40°C ~ 100°C |
Mounting Type: | Through Hole |
Package / Case: | 2-DIP |
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Optical Sensors - PhotodiodesPhotodiodes, also known as photosensitive diodes, are an important type of optical sensor which detects light, electricity and other forms of energy. The BPW82 is a type of photodiode which can be used to accurately measure current, voltage and other electrical signals from a variety of sources, including both visible light and invisible infrared radiation. The BPW82 photodiode is characterized by its wide range of linearity, sensitivity and fast response. It also offers advantages such as low noise, low power consumption, high-speed operation and reliable performance.The BPW82 is an NPN junction diode with an active area of 0.2mm x 5.4mm. It is made from a silicon substrate with a buried layer of high-Impedance P+ doped silicon oxide (SiO). An additional layer of P-type doped silicon oxide (SiO) is built on top of the P+ layer and serves as a diffusion barrier. The junction-capable material is the P-type doped silicon oxide, which forms a barrier between the P+ and N layers and acts as a current collecting structure.The working principle of the BPW82 is based on the photoelectric effect, in which electrons are released when light is incident on the junction of the photodiode. When a light source is focused in the active area of the BPW82, the photons are absorbed by the P-type doped silicon oxide, creating electron-hole pairs. The electrons are then collected by the negative surface of the photodiode and the holes are collected by the positive surface. The current generated by the diode is related to the intensity of the light incident on it.In addition to its linear response, the BPW82 photodiode is also well-suited for applications where a fast response is required, such as photosensors and optical positioning systems. It can be used to measure light intensity, temperature, pressure and vibration. Furthermore, it is also often used in industrial safety systems, as it can detect movement or smoke in a wide range of applications.The BPW82 photodiode is an ideal solution for applications that require high precision and accuracy. It offers low power consumption, high-speed operation, and reliable performance, making it the preferred choice for many industrial and commercial applications. In addition, its wide range of linearity and sensitivity makes it ideal for applications such as temperature and light sensing.Overall, the BPW82 photodiode is a versatile, high-precision optical sensor which offers many advantages over other devices. It is an ideal choice for applications that require accurate current, voltage and other electrical signal measurements from a range of light sources, including visible light and infrared radiation. In addition, its low power consumption, high-speed operation and reliable performance make it a popular choice for many industrial and commercial applications.
The specific data is subject to PDF, and the above content is for reference
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