BPX 81-3/4 Allicdata Electronics
Allicdata Part #:

BPX81-3/4-ND

Manufacturer Part#:

BPX 81-3/4

Price: $ 0.44
Product Category:

Sensors, Transducers

Manufacturer: OSRAM Opto Semiconductors Inc.
Short Description: PHOTOTRANSISTOR NPN 850NM TH
More Detail: Phototransistor 850nm Top View Radial - 2 Leads
DataSheet: BPX 81-3/4 datasheetBPX 81-3/4 Datasheet/PDF
Quantity: 1000
2000 +: $ 0.40103
Stock 1000Can Ship Immediately
$ 0.44
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
Voltage - Collector Emitter Breakdown (Max): 32V
Current - Collector (Ic) (Max): 50mA
Current - Dark (Id) (Max): 25nA
Wavelength: 850nm
Viewing Angle: 36°
Power - Max: 90mW
Mounting Type: Through Hole
Orientation: Top View
Operating Temperature: -40°C ~ 80°C (TA)
Package / Case: Radial - 2 Leads
Description

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Optical Sensors - Phototransistors are types of semiconductor devices designed to detect light or other electromagnetic radiation and generate an output current or voltage when exposed to light. BPX 81-3/4 is a special type of phototransistor that combines the input signal and output signal features of a transistor into one integrated device. It is an enhancement-mode device that uses a single channel to transfer an input signal into an output signal. This device is used in applications such as optocouplers, high-speed data transmission, solid-state relays, wearables, and medical devices.

When exposed to light, the BPX 81-3/4 operates by converting the light intensity into an electrical voltage. The photons of light absorbed by the semiconductor chip of the BPX 81-3/4 are converted into an electrical signal which is then amplified and sent as an output voltage in the collector lead of the transistor. The gain of the BPX 81-3/4 is adjustable; the gain can be increased by raising the operating voltage. The device is highly sensitive and can detect light of all wavelengths from the visible spectrum.

The BPX 81-3/4 is composed of different layers of semiconductor materials. It has a PN junction which is the core of the device. The top layer of the device is the P-type layer that carries the majority carriers which are holes. The bottom layer is the N-type layer which carries the minority carriers which are electrons. The phototransistor is constructed with a high-gain, internally matched, reverse-biased P-N junction barrier, making it suitable for use in high speed circuits. This high-gain arrangement produces a much larger signal than a conventional resistor-transistor logic (RTL) circuit.

The BPX 81-3/4 is used in a variety of application fields due to its high speed switching capabilities. The device can be used for optoelectronic couplers, level detectors, optical communication, signal and data transmission, and optical data storage solutions. The BPX 81-3/4 is also used in medical applications such as optoacoustic imaging (OPAI) systems, high speed imager systems, and medical lasers. It is an ideal choice for devices that require low power and do not require large output signals, as it does not require a large amount of power to operate.

The BPX 81-3/4 has a wide range of applications due to its ability to switch signals quickly and accurately. It can be used in microprocessors, integrated circuits, and system-on-a-chip (SoC) applications. Optical switches for high speed data links and high-speed data transmission systems can also benefit from the BPX 81-3/4. The device can also be used in solid-state relays, wearables, and medical devices, as it is capable of detecting light from the visible spectrum. The BPX 81-3/4 can easily be used in a variety of set-ups, making it a great choice for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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