Allicdata Part #: | BRCC064GWZ-3E2TR-ND |
Manufacturer Part#: |
BRCC064GWZ-3E2 |
Price: | $ 0.26 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | ROHM Semiconductor |
Short Description: | IC EEPROM 64K I2C UCSP30L1 |
More Detail: | EEPROM Memory IC 64Kb (8K x 8) I²C 400kHz UCSP30L... |
DataSheet: | BRCC064GWZ-3E2 Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.23576 |
6000 +: | $ 0.22340 |
15000 +: | $ 0.21954 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Memory Type: | Non-Volatile |
Memory Format: | EEPROM |
Technology: | EEPROM |
Memory Size: | 64Kb (8K x 8) |
Clock Frequency: | 400kHz |
Write Cycle Time - Word, Page: | 5ms |
Memory Interface: | I²C |
Voltage - Supply: | 1.6 V ~ 5.5 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 6-XFBGA, CSPBGA |
Supplier Device Package: | UCSP30L1 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The BRCC064GWZ-3E2 is a type of memory (DRAM) device that is used in a variety of applications. This type of memory is most commonly used in embedded systems, such as in industrial controllers, PLCs, and digital logic controllers, but can also be used in a variety of other applications. This type of memory is also used in high performance applications where low latency is required. The BRCC064GWZ-3E2 is a 64 megabit memory that is used in a wide range of use cases.
The working principle of this type of memory is that it is a dynamic random access memory (DRAM) device which allows for the storage and retrieval of data from memory. DRAM memory is composed of cells, which store each bit of information. The cell is an electronic switch that is connected to one of two possible states, either on or off. When the switch is set to on, it means that there is a “1” stored in the cell, and when it is set to off it means that a “0” is stored. The cell can also be set to a state of “unknown” which means that no data is stored in the cell.
The BRCC064GWZ-3E2 has many features which make it well suited for its applications. It has an error detection and correction system which ensures that data stored in the memory is reliable and accurate. It also has a fast refresh rate which ensures that data stored in the memory is up-to-date. The BRCC064GWZ-3E2 also allows for a wide range of access patterns, allowing it to be used in a variety of applications.
In terms of usage, BRCC064GWZ-3E2 is an ideal choice for applications that require reliable and accurate data storage. Due to its fast refresh rate and error detection and correction system, it is ideal for high-performance applications where low latency is required. It is also suitable for a wide range of other applications, such as in embedded systems, industrial controllers, and digital logic controllers. This type of memory is also used in a variety of other use cases, as it is suitable for a wide range of applications.
The BRCC064GWZ-3E2 is a type of dynamic random access memory (DRAM) device that is ideal for a variety of applications. It has an error detection and correction system, a fast refresh rate, and is suitable for a wide range of access patterns. This type of memory is suitable for applications that require reliable and accurate data storage, as well as for high-performance applications where low latency is required. It can also be used in a variety of other applications, as it is suitable for a wide range of use cases.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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BRCC064GWZ-3E2 | ROHM Semicon... | 0.26 $ | 1000 | IC EEPROM 64K I2C UCSP30L... |
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