BU4584BFV-E2 Allicdata Electronics

BU4584BFV-E2 Integrated Circuits (ICs)

Allicdata Part #:

BU4584BFV-E2TR-ND

Manufacturer Part#:

BU4584BFV-E2

Price: $ 0.29
Product Category:

Integrated Circuits (ICs)

Manufacturer: ROHM Semiconductor
Short Description: IC INVERTER SCHMITT 6CH 14SSOPB
More Detail: Inverter IC 6 Channel Schmitt Trigger 14-SSOPB
DataSheet: BU4584BFV-E2 datasheetBU4584BFV-E2 Datasheet/PDF
Quantity: 2500
2500 +: $ 0.26284
Stock 2500Can Ship Immediately
$ 0.29
Specifications
Current - Output High, Low: 3mA, 3mA
Base Part Number: 4584
Package / Case: 14-LSSOP (0.173", 4.40mm Width)
Supplier Device Package: 14-SSOPB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Max Propagation Delay @ V, Max CL: 50ns @ 15V, 50pF
Logic Level - High: 3.5 V ~ 11 V
Logic Level - Low: 1.5 V ~ 4 V
Series: 4000B
Current - Quiescent (Max): 4µA
Voltage - Supply: 3 V ~ 16 V
Features: Schmitt Trigger
Number of Inputs: 6
Number of Circuits: 6
Logic Type: Inverter
Part Status: Not For New Designs
Packaging: Tape & Reel (TR) 
Description

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BU4584BFV-E2 is a type of N-channel power MOS FETs which are often used in high frequency and high speed switching applications. The device operates with low on-state resistance and high off-state breakdown voltage, making it suitable for a variety of applications such as motor drives, lighting, home appliance control, industrial control and power supplies.

The BU4584BFV-E2 chips are normally supplied in a TO-220F packaging type and can be used in power switching applications up to 800V. It is built on a high-voltage PowerMOS technology which allows for high power density with low power loss. The device offers low input and output capacitance, providing higher frequency operation.

The working principle of the BU4584BFV-E2 is based on a N-channel power MOS FET, which is an insulated-gate field-effect transistor (IGFET). This type of transistor has an insulated gate electrode which is managed by the applied voltage. The gate is separated from the semiconductor body by an insulated layer, hence it works without any physical contact with the controlled current flow.

When the gate voltage is negative with respect to the source (which is usually the ground potential), an inversion channel forms in the device between the drain and the source node. This creates a channel which allows free electrons to flow from the drain to the source, thus forming an electron-hole pair. This enables large current conductance between the two terminals, resulting in a small on-resistance.

The BU4584BFV-E2 chip is specifically designed for use in high frequency circuits and high speed switching applications. The device has an adjustable gate voltage threshold between 0.6V and 3V, allowing the switch to be used in a variety of applications. The maximum current rating of the device is 25A, which makes it suitable for high power applications.

The BU4584BFV-E2 device is ideal for applications like lighting, motor drives, industrial control systems, and power supplies. The device offers high-speed switching with low on-state resistance and high off-state breakdown voltage which makes it well suited for these applications. The device can also be used for other types of control applications, like LED lighting and motor control.

In conclusion, the BU4584BFV-E2 is a versatile power MOS FET device which is suitable for a variety of applications, especially those which require high speed switching and high frequency operation. The adjustable gate voltage threshold allows the device to be used in a variety of applications and its high power rating makes it suitable for use in high-power applications. This makes the BU4584BFV-E2 an ideal device for a variety of applications, ranging from lighting and motor control to industrial control systems and power supplies.

The specific data is subject to PDF, and the above content is for reference

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