BULK128D-B Allicdata Electronics
Allicdata Part #:

BULK128D-B-ND

Manufacturer Part#:

BULK128D-B

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: TRANS NPN 400V 4A SOT-82
More Detail: Bipolar (BJT) Transistor NPN 400V 4A 55W Through ...
DataSheet: BULK128D-B datasheetBULK128D-B Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 4A
Voltage - Collector Emitter Breakdown (Max): 400V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 2.5A
Current - Collector Cutoff (Max): 250µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 2A, 5V
Power - Max: 55W
Frequency - Transition: --
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: SOT-82
Supplier Device Package: SOT-82-3
Description

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Transistors - Bipolar (BJT) - Single

The BULK128D-B is a Bipolar Junction Transistor (BJT) designed for high-speed analog and digital applications. It is a type of transistor typically used for switching or amplifying electrical signals and can provide up to 25V DC. The following article will discuss the application fields of the BULK128D-B, its working principle, construction, and some of its features.

Application Fields of BULK128D-B

The BULK128D-B is suitable for a variety of applications, providing high switching and amplification of electrical signals. It works well in applications such as motor control, power sources, and low-level analog signals. It can also be used in audio and video amplifiers, power supplies, and various other applications, such as automotive and industrial control.

Working Principle of BULK128D-B

The BULK128D-B is a type of BJT, or Bipolar Junction Transistor. This type of transistor works on the principle of semiconductor conduction, whereby current can flow through a semiconductor material when it is subjected to a forward bias voltage. In a BJT, this effect is achieved by placing two different types of doped semiconductor materials (N-type and P-type) together in a single structure.

The physical structure of the BULK128D-B consists of an N-type emitter, a P-type collector, and a P-type base. The transistor works in the following way: A small current is applied to the base, which in turn causes a much larger current to flow between the collector and the emitter.

This phenomenon is known as current amplification. The ratio of the output current to the input current is called the current gain of the BJT, and it is denoted as hFE. The larger the value of hFE, the greater the current amplification provided by the BJT.

Features of BULK128D-B

The BULK128D-B has a number of features that make it suitable for a variety of applications. It has a high current gain of 500 to 700, which helps to amplify low-level signals with little distortion. It also has a high breakdown voltage of 25V, which allows it to safely distribute high-voltage signals. It also has low power dissipation, meaning it consumes less power when it is operating, which helps it to run cooler.

In addition, the BULK128D-B has a low thermal resistance, which helps it to operate at higher temperatures without compromising its performance. It also has a low gate-to-source capacitance, which helps reduce voltage spikes and noise when amplifying digital signals. Finally, it has a low output capacitance, which helps reduce signal transients.

Conclusion

The BULK128D-B is a type of Bipolar Junction Transistor (BJT) designed for high-speed analog and digital applications. It provides high switching and amplification of electrical signals and consumes relatively low power. The features of this transistor, such as its high current gain, high breakdown voltage, low power dissipation and low capacitance make it suitable for a range of applications, including motor control, power supplies, audio and video amplification, and automotive and industrial control.

The specific data is subject to PDF, and the above content is for reference

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