Allicdata Part #: | CP547-MJ11015-CT-ND |
Manufacturer Part#: |
CP547-MJ11015-CT |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Central Semiconductor Corp |
Short Description: | TRANS PNP DARL 30A 120V DIE |
More Detail: | Bipolar (BJT) Transistor |
DataSheet: | CP547-MJ11015-CT Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Specifications
Series: | * |
Part Status: | Obsolete |
Description
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CP547-MJ11015-CT, also known as an NPN Bipolar Junction Transistor (BJT), is a three terminal semiconductor device commonly used in a wide range of circuitry. They are most commonly used as amplifiers with two of the terminals providing input signals, and the third acting as the output signal. This type of transistor is also often referred to as a ‘Darlington pair’ because of the similarity of its two active elements. This particular type of transistor can be found in a variety of applications, such as consumer electronics and automotive systems. In consumer electronics, they are widely used in the amplification and switching circuits found in television sets, radio receivers, and other consumer products. In automotive systems, they are often found in the control circuitry for window and door locks, interior and exterior lighting, as well as audio and visual equipment. The CP547-MJ11015-CT is also widely used in various other applications, including digital logic, power regulation, and power amplification circuits. This type of transistor is usually found in devices such as modems, telecom equipment, and other digital control systems, as well as power circuits for household appliances and industrial equipment.The underlying principle behind the operation of the CP547-MJ11015-CT is the same as with any other BJT. It consists of two active elements, the collector and the emitter, which are connected by an insulating base. The collector-emitter junction is highly doped with n-type semiconductor material and creates a closed loop when a voltage is applied to the base. This closed loop provides the device with its gain, or amplification factor. When a positive voltage is applied to the base of the transistor, electrons are emitted from the emitter, flow through the base and are then collected by the collector. This flow of electrons from the emitter to the collector, or from the collector to the emitter, is the foundation of the BJT’s gain. The higher the applied base voltage, the higher the gain of the transistor. The CP547-MJ11015-CT is rated to handle currents up to 10A, with a maximum voltage rating of 500V, and a maximum collector power dissipation of 25W. It features a relatively low forward voltage drop of approximately 0.3V, and an high gain of up to 2000. The CP547-MJ11015-CT also has a low thermal resistance of 0.2Ω/W, meaning it can dissipate heat quickly and efficiently. In conclusion, the CP547-MJ11015-CT is an excellent choice for most common BJT applications. It is a reliable, high-performance device, capable of handling a wide range of voltages and currents, and can be used in both digital and power circuits. Its high gain, low forward voltage drop, and low thermal resistance make it an ideal choice for many applications.The specific data is subject to PDF, and the above content is for reference
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