BUP213

Vce(on) (Max) @ Vge, Ic:	3.2V @ 15V, 15A
Supplier Device Package:	TO-220AB
Package / Case:	TO-220-3
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Test Condition:	600V, 15A, 82 Ohm, 15V
Td (on/off) @ 25°C:	70ns/400ns
Input Type:	Standard
Switching Energy:	--
Power - Max:	200W
Series:	--
Current - Collector Pulsed (Icm):	64A
Current - Collector (Ic) (Max):	32A
Voltage - Collector Emitter Breakdown (Max):	1200V
IGBT Type:	--
Moisture Sensitivity Level (MSL):	--
Part Status:	Obsolete
Lead Free Status / RoHS Status:	--
Packaging:	Tube

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BUP213 Application Field and Working PrincipleBUP213 is a high-performance single TOP IGBT (insulated gate bipolar transistor) developed by Infineon Technologies. The BUP213 is suitable for a wide range of applications, such as industrial automation, motion control, and power electronics. It is also suitable for high speed switching and suitable for line-commutated motor drives, due to its low emission of switches. This article will discuss the application field and working principle of the BUP213 IGBT.The BUP213 is a gate commutated partial discharge tolerant IGBT that can provide up to 1250 VDC blocking voltage. It is suitable for a wide range of applications such as industrial power supplies and motor drives. Due to its low thermal resistance, it can also be used for high power applications and factory automation. Additionally, due to its low forward voltage drop, the BUP213 is ideal for power electronics applications such as solar inverter, Active Power Factor Correction, and DC-DC conversion.Aside from its wide range of applications, the BUP213 is extremely reliable. It has a maximum saturation current of 10 A, which makes it suitable for a variety of motor drive applications. Additionally, the BUP213 can also handle high operating temperatures up to 150 °C and has a high reliability with a minimum MTTF (Mean Time To Failure) of 23.5 years.When it comes to the BUP213\'s working principle, it is based on the common base principle. This means that it incorporates a gate and a collector into a single package. When a gate signal is applied to the gate terminal, the current between the gate and the collector is modulated and the electrical characteristics of the transistor is changed. This leads to the output being either “switched on” or “switched off", which dictates the device\'s performance during operation.In conclusion, the BUP213 single TOP IGBT is a reliable and powerful device suitable for many applications. It has a wide operating temperature range, high reliability, and low forward voltage drop, making it ideal for powering a wide range of applications from industrial to the power electronics. Additionally, it utilizes the common base principle to regulate the current between the gate and collector for either switching the device on or off.

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